Advertisement

Atomistic Aspects of Sige Nanostructure Formation by Molecular-Beam Epitaxy

  • O. P. Pchelyakov
  • Yu. B. Bolkhovityanov
  • A.I. Nikiforov
  • B. Z. Olshanetsky
  • L. V. Sokolov
  • S. A. Teys
  • B. Voigtländer
Chapter
Part of the NATO Science Series book series (NAII, volume 65)

Abstract

Based on experimental data obtained with high-energy electron- diffraction (RHEED) and in situ scanning tunneling microscopy, the formation mechanism of the Ge wetting layer on Si(001) and Si(111) is presented. It is shown that the first Ge nanoclusters containing up to several tens of atoms nucleate predominantly on substrate surface defects and on domain boundaries of Si(111)-7×7 and Si(001)-2×l. For the Si(111)-7×7 surface, the nucleation is observed to occur inside the unit cell of the superstructure. The formation and accretion of several generations of islands with nanosizes were observed. The periodic variations in the surface cell parameter of the Ge film were determined by RHEED during the formation of the wetting layer according to the 2D growth mode. It is argued that these variations are caused by elastic deformation of edges of two-dimensional nanoislands.

Keywords

Scanning Tunneling Microscopy Image RHEED Pattern Atomistic Aspect Specular Beam Specular Intensity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Goldfarb, I. and Briggs, G.A.D. (1999) Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces, Surf. Sd. 433-435, pp. 449–454.CrossRefGoogle Scholar
  2. 2.
    Pchelyakov, O.P., Markov, V.A., Nikiforov, A.I. and Sokolov, L.V. (1997) Surface processes and phase diagrams in MBE growth of Si/Ge heterostructure, Thin Solid Films 306, pp. 299–306.CrossRefGoogle Scholar
  3. 3.
    Kubler, L., Dentel, D., Bischoff, J.L., Ghica, C., Ulhag-Bouillet, C. and Werckmann, J. (1998) Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1-xGexx hut islands, Appl. Phys. Lett. 73, pp. 1053–1055.CrossRefGoogle Scholar
  4. 4.
    Ohtake, A., Ozeki, M. and Nakamura, J. (2000) Strain relaxation in InAs/GaAs(111)A heteroepitaxy, Phys. Rev. Lett, 84, pp. 4665–4668.CrossRefGoogle Scholar
  5. 5.
    Grandjean, N. and Massies, J. (1993) Epitaxial growth of highly strained InxGa1-x As on GaAs(001)—The role of surface diffusion length, J. Crystal Growth 134, pp. 51–62.CrossRefGoogle Scholar
  6. 6.
    Turban, P., Hennet, L. and Andrieu, S. (2000) In-plane lattice spacing oscillatory behaviour during the two-dimensional hetero-and homoepitaxy of metals, Surf. Sd. 446, pp. 241–253.CrossRefGoogle Scholar
  7. 7.
    Köhler, U., Demuth, J.E. and Hamers, R.J. (1989) Scanning tunneling microscopy study of low-temperature epitaxial growth of silicon on Si(111)—(7×7), J. Vac. Sd. Technal. A 7, pp. 2860–2867.CrossRefGoogle Scholar
  8. 8.
    Kohler, U., Jusko, O., Pietsch, G., Muller, B, and Henzler, M. (1991) Strained-layer growth and islanding of germanium on Si(111)—(7×7) studied with STM, Surf. Sci. 248, pp. 321–331.CrossRefGoogle Scholar
  9. 9.
    Pchelyakov, O.P., Bolkhovityanov, Yu.B., Sokolov, L.V., Nikiforov, A.I., and Voigtländer, B. (2000) Molecular beam epitaxy of nanostructures based on silicon and germanium, Izv. Akad. Nauk Fiz. 64, pp. 205–214.CrossRefGoogle Scholar
  10. 10.
    Vostokov, N.V., Dolgov, I.V., Drozdov, Yu. N. and Krasilnik, Z.F. (2000) The uniform nanoislands Ge on Si(001), Izv. Akad, Nauk Fiz. 64, pp. 284–287.Google Scholar
  11. 11.
    Bolkhovityanov, Yu.B., Pchelyakov, O.P., Nikiforov, A.I., Sokolov, L.V. and Voigtlander, B. (2001) Self-organizing and self-assembling of GexSi1-x quantum dots—mechanisms of formation by MBE, Izv, Akad. Nauk Fiz. 65, pp. 180–186.Google Scholar
  12. 12.
    Sokolov, L.V., Stenin, S.I., Toropov, A.I. and Pchelyakov, O.P. (1997) Surf. Invest, 12 (1997), p. 1151.Google Scholar
  13. 13.
    A. Fischer, A., Kuhne, H., Lippert, G., Richter, H. and Tillack, B. (1999) State of stress and critical thickness of strained small-area SiGe layers, Phys. Stat, Sol. A 171, pp. 475–485.CrossRefGoogle Scholar
  14. 14.
    Nikiforov, A.I., Cherepanov, V.A. and Pchelyakov, O.P. (2000) In situ RHEED control of self-organized Ge quantum dots, Thin Solid Films 380, pp. 158–163.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • O. P. Pchelyakov
    • 1
  • Yu. B. Bolkhovityanov
    • 1
  • A.I. Nikiforov
    • 1
  • B. Z. Olshanetsky
    • 1
  • L. V. Sokolov
    • 1
  • S. A. Teys
    • 1
  • B. Voigtländer
    • 2
  1. 1.Institute of Semiconductor Physics SB RASNovosibirskRussia
  2. 2.Institut für Grenzflächenforschung und VacuumphysikForchungszentrum JülichJülichGermany

Personalised recommendations