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Mechanisms and Anomalies in The Formation of Inas—Gaas(001) Quantum Dot Structures

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Atomistic Aspects of Epitaxial Growth

Part of the book series: NATO Science Series ((NAII,volume 65))

Abstract

We examine critically the available information, both experimental and theoretical, on the formation of self-assembled quantum dots (QDs) in the lattice-mismatched InAs/GaAs system via a presumed Stran- ski-Krastanov growth mode. We consider the orientation and reconstruction specificity of QD formation, the structure and composition of the wetting layer, which appears to be a necessary precursor to QDs, and by drawing an analogy with homoepitaxy on GaAs(001)—β2(2x4), we argue that the surface structure prior to dot formation is an essential factor for the comprehensive understanding of this phenomenon. The shape of QDs is important in the evaluation of their electronic structure and we indicate how errors in the interpretation of diffraction-based techniques have resulted in the dots being ascribed regular crystallographic features in the form of low index facets, whereas they have rather irregular shapes and curved surfaces. Finally we discuss compositional measurements of mass transport effects that occur during encapsulation of the QDs with a layer of GaAs, used to provide electronic confinement.

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Authors and Affiliations

  1. The Blackett Laboratory, Imperial College, London, SW7 2BZ, UK

    B. A. Joyce & D. D. Vvedensky

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  1. B. A. Joyce
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  2. D. D. Vvedensky
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Editors and Affiliations

  1. Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic

    Miroslav Kotrla

  2. Physics Department, Solid State Division, University of Ioannina, Ioannina, Greece

    Nicolas I. Papanicolaou

  3. The Blackett Laboratory, Imperial College, London, UK

    Dimitri D. Vvedensky

  4. Department of Physics, Florida Atlantic University, Boca Raton, Florida, USA

    Luc T. Wille

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Joyce, B.A., Vvedensky, D.D. (2002). Mechanisms and Anomalies in The Formation of Inas—Gaas(001) Quantum Dot Structures. In: Kotrla, M., Papanicolaou, N.I., Vvedensky, D.D., Wille, L.T. (eds) Atomistic Aspects of Epitaxial Growth. NATO Science Series, vol 65. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0391-9_24

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  • DOI: https://doi.org/10.1007/978-94-010-0391-9_24

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  • Print ISBN: 978-1-4020-0675-3

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