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Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy

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Atomistic Aspects of Epitaxial Growth

Part of the book series: NATO Science Series ((NAII,volume 65))

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Abstract

A realistic atomistic lattice-gas model is developed which describes the key features of film morphologies observed for multilayer homoepitaxial growth on Ag(100) in the temperature range 175-300 K corresponding to “mound formation”. The model accounts for irreversible formation of islands in each layer mediated by terrace diffusion, growth coalescence of islands within each layer, a non-uniform step edge barrier inhibiting downward transport, and restricted rounding of kinks by adatoms at island edges (at lower temperatures).

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Authors and Affiliations

  1. Iowa State University, Department of Chemistry and Ames Laboratory, Ames, Iowa, 50011, USA

    K. J. Caspersen & J. W. Evans

Authors
  1. K. J. Caspersen
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  2. J. W. Evans
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Editor information

Editors and Affiliations

  1. Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic

    Miroslav Kotrla

  2. Physics Department, Solid State Division, University of Ioannina, Ioannina, Greece

    Nicolas I. Papanicolaou

  3. The Blackett Laboratory, Imperial College, London, UK

    Dimitri D. Vvedensky

  4. Department of Physics, Florida Atlantic University, Boca Raton, Florida, USA

    Luc T. Wille

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© 2002 Springer Science+Business Media Dordrecht

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Caspersen, K.J., Evans, J.W. (2002). Realistic Atomistic Modeling of Mound Formation During Multilayer Growth: Metal(100) Homoepitaxy. In: Kotrla, M., Papanicolaou, N.I., Vvedensky, D.D., Wille, L.T. (eds) Atomistic Aspects of Epitaxial Growth. NATO Science Series, vol 65. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0391-9_17

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  • DOI: https://doi.org/10.1007/978-94-010-0391-9_17

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0675-3

  • Online ISBN: 978-94-010-0391-9

  • eBook Packages: Springer Book Archive

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