High-Frequency Capacitor Nanostructure Formation by Intercalation

  • I. I. Grygorchak
  • B. O. Seredyuk
  • K. D. Tovstyuk
  • B. P. Bakhmatyuk
Chapter
Part of the NATO Science Series book series (NAII, volume 61)

Abstract

Capacitor nano structure for alternative current circuits by intercalation technology method is formed. It is shown the 100 times capacitance increase in comparison to well known volumetric-porous structures. Up to now the most important problem in the microelectronics, electron technique production miniaturization has been solved in the micron sizes. The same tendency is considered for capacitor technology. The different parameters, achieved in this direction are given in Table 1 [1].

Keywords

Titanium Dioxide Hydrate Tantalum 

References

  1. 1.
    Energoizdat, M., (1987) in Kuchinskyj (ed.) Handbook Electrical capacitors and capacitor devices, Russia.Google Scholar
  2. 2.
    Onyshchuk, V.Ye. and Averkin, Ye.I. (1986), “Technology of radio capacitors production”, M Vysshaya Shkola, 192 pp., Russia.Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • I. I. Grygorchak
    • 1
  • B. O. Seredyuk
    • 2
  • K. D. Tovstyuk
    • 1
  • B. P. Bakhmatyuk
    • 3
  1. 1.Lviv Dept. of Institute for Problems of Material Science of NASUUkraine
  2. 2.Phys. Dept of Lviv National I. Franko UniversityUkraine
  3. 3.Chernivtzi Dept. of Institute for Problems of Material Science of NASUUkraine

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