High-Frequency Capacitor Nanostructure Formation by Intercalation
Capacitor nano structure for alternative current circuits by intercalation technology method is formed. It is shown the 100 times capacitance increase in comparison to well known volumetric-porous structures. Up to now the most important problem in the microelectronics, electron technique production miniaturization has been solved in the micron sizes. The same tendency is considered for capacitor technology. The different parameters, achieved in this direction are given in Table 1 .