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Proximal Probe Induced Chemical Processing for Nanodevice Elaboration

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Book cover Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies

Part of the book series: NATO Science Series ((NAII,volume 55))

Abstract

Today’s ICs technology is based on MOSFET whose dimensions are shrunken as integration increases. It is wellknown that this elementary device in its present configuration (a channel and a single gate) could not be used any more for channel lengths lower than about 30 nm [1]. In fact, beyond this limit, two main problems will appear due to a small size effect. The first one is the dopant number (near unity) fluctuation in the channel from one device to another which will affect the device characteristics reliability. The second problem is the appearance of extra physical phenomenon such as ballistic transport or tunnel current flow through the oxide gate. Moreover, if the circuit integration increases but if the commutation still needs to exchange a great number of electrons (presently roughly 104 electrons for a MOSFET), the energy dissipated in the interconnection layout will increase drastically. Consequently, in order to be able to keep on integration beyond this size limit, MOSFET configuration has to be modified [2] or new components, based on new physical phenomena and involving a lower number of electrons for switching must be designed to replace MOSFET in ICs. Single Electron Transistors (SET), whose principle is based on Coulomb blockade effect [3], are now considered as ideal devices to replace FET in memories.

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Authors and Affiliations

  1. Groupe de Physique des Etats Condensés Faculté des Sciences de Luminy, Case 901, 13288, Marseille Cedex 09, France

    D. Tonneau, N. Clement, A. Houel, N. Bonnail, H. Dallaporta & V. Safarov

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  1. D. Tonneau
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  2. N. Clement
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  3. A. Houel
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  4. N. Bonnail
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  1. School of Electrochemical and Electrometallurgical Engineering, National Polytechnic Institute of Grenoble, Grenoble, France

    Yves Pauleau

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Tonneau, D., Clement, N., Houel, A., Bonnail, N., Dallaporta, H., Safarov, V. (2002). Proximal Probe Induced Chemical Processing for Nanodevice Elaboration. In: Pauleau, Y. (eds) Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies. NATO Science Series, vol 55. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0353-7_11

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  • DOI: https://doi.org/10.1007/978-94-010-0353-7_11

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