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Part of the book series: NATO Science Series ((NAII,volume 59))

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Abstract

The recent progress in nanodevice technology yielded the possibility of forming so-called quantum dots (QD) or artificial atoms (AA) [1, 2]. At low temperatures and when a QD is strongly coupled to the leads, electronic transport phenomena through such a nanodevice are dominated by strong electron correlations [3, 4]. The aim of the present paper is to calculate the current tunnelling through the quantum dot in the strong coupling regime. Differential conductance vs. bias voltage dependence gives information on the density of states (i.e. the spectrum) of the investigated system. That kind of tunneling conductance spectroscopy of a two-level AA is presented. We introduce hybridization mediated effective inter-level mixing controlled by the electron correlations. Multi-level QD conductance in the strong coupling regime was investigated in [5, 6], however, the inter-level mixing was not taken into account in the calculations.

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References

  1. Kouwenhoven, L.P. et al. (2001) Few-electron quantum dots, Rep. Prog. Phys. 64, pp. 701–736; references therein.

    Article  CAS  Google Scholar 

  2. Ralph, D.C. et al. (1996) Spectroscopic measurements of discrete electronic states in single metal nanoparticles Phys. Rev. Lett. 74, pp. 3241–3244.

    Article  Google Scholar 

  3. Goldhaber-Gordon, D. et al. (1998) Kondo effect in single electron transistor, Nature 391, pp. 156–159, Göres, J. et al. (2000) Fano resonances in electronic transport through a single-electron transistor, Phys. Rev. B62, pp. 2188-2194.

    Article  CAS  Google Scholar 

  4. Bulka, B.R. and Stefanski, P. (2001) Fano and Kondo resonance in electronic current through nanodevices, Phys. Rev. Lett. 86, pp. 5128–5131.

    Article  CAS  Google Scholar 

  5. Pohjola, T. et al. (2000) Strong tunneling in small quantum dots: Kondo effect in two model systems, J. Low Temp. Phys, 118, pp. 391–399.

    Article  CAS  Google Scholar 

  6. Levy Yeyati, A. et al.(1999) Transport in multilevel quantum dots: from the Kondo effect to the Coulomb blockade regime, Phys. Rev. Lett. 83, pp. 600–603.

    Article  Google Scholar 

  7. Gunnarsson, O. and Schönhammer, K. (1983) Electron spectroscopies for Ce com-pounds in the impurity model, Phys. Rev. B28, pp. 4315–4341.

    Google Scholar 

  8. Horvatic, B. et al. (1987) Finite-temperature spectral density for the anderson model, Phys. Rev. B36, pp. 675–683.

    Google Scholar 

  9. Costi, T.A. et al. (1994) Transport coefficients of the anderson model via the nu-merical renormalization group, J. Phys. Cond. Mat. 6, pp. 2519–2558.

    Article  CAS  Google Scholar 

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© 2002 Springer Science+Business Media Dordrecht

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Stefański, P., Bułka, B.R. (2002). Tunneling Conductance Spectroscopy of the Two-Level Kondo Artificial Atom. In: Graja, A., Bułka, B.R., Kajzar, F. (eds) Molecular Low Dimensional and Nanostructured Materials for Advanced Applications. NATO Science Series, vol 59. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0349-0_37

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  • DOI: https://doi.org/10.1007/978-94-010-0349-0_37

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-0578-7

  • Online ISBN: 978-94-010-0349-0

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