Abstract
While the silicon-based CMOS electronics is entering the nano-regime, it is preparing itself to accept new materials for increasing the functionality of the future IC’s. One example is the integration of magnetic multilayer nanostructures for creating a new generation of Magnetic Random Access Memories. Proven functionality in magnetic devices with nanoscale dimensions is a key asset for their use in other types of integrated devices such as lab-on-chip biosensors. This chapter will describe the technological challenges to realise the full potential of the integrated magnetic structures in which the electron spin rules the characteristics. One recognised area of future nanoelectronies is that of the use of the electron spin in semiconductor components. This field has been coined spintronics. A second part of this chapter will be devoted to the description of some of the current challenges of spintronics. Most emphasis will be placed on the issue of injecting a spin-polarized current in a semiconductor heterostructure.
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De Boeck, J. et al. (2002). The Electron Spin in Nanoelectronics. In: Buzaneva, E., Scharff, P. (eds) Frontiers of Multifunctional Nanosystems. NATO Science Series, vol 57. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0341-4_35
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DOI: https://doi.org/10.1007/978-94-010-0341-4_35
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