Abstract
Electronic structure of the crystalline nanoparticles of porous silicon is under discussion till now. It is known that the electroreflectance is the best method to determined direct transitions in the semiconductor materials. In present paper, porous silicon that was prepared by electrochemical and stain etching were investigated by electroreflectance in spectral region from 1.5 eV to 3 eV where photoluminescence bands usually take place. It was shown that there are few direct transitions in the spectral region were bulk silicon hasn’t one. These direct transitions could be associated with photoluminescence bands.
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© 2002 Springer Science+Business Media Dordrecht
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Holiney, R.Y., Matveeva, L.A., Venger, E.F. (2002). Direct Transition in the Porous Nanosilicon Measured by Electroreflectance. In: Buzaneva, E., Scharff, P. (eds) Frontiers of Multifunctional Nanosystems. NATO Science Series, vol 57. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0341-4_23
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DOI: https://doi.org/10.1007/978-94-010-0341-4_23
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0561-9
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