New SiC on Insulator Wafers Based on the Smart-Cut® Approach and their Potential Applications

Abstract

Important progress have been made in the fabrication of SiCOI (Silicon Carbide On Insulator) structures using the Smart-Cut® approach. The different structures which have been demonstrated both in terms of transferred layer polytypes (4H and 6H), of handle substrate (Silicon or Polycrystalline Silicon carbide) and of buried insulator layers (Silicon Dioxide and Silicon Nitride) will be described. Deep traps present in the SiC layer after transfer and annealing of the structure and which are generated by the ion implantation process has been studied using different techniques (Hall measurements, DLTS, Photoluminsecence, RPE). We will see that their density can be strongly minimised making the as transferred layer quality compatible with many applications. Considering both the improved layer quality and the different possible SiCOI structures now available the different possible applications and the perspectives will be reviewed.