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Electron-Hole Pair Reversed Drift in SOI Structure

  • V. N. Dobrovolsky
  • L. V. Ishchuk
  • G. K. Ninidze
Chapter
Part of the NATO Science Series book series (NAII, volume 58)

Abstract

It is known that in the n-semiconductor electron-hole pairs generally drift along the electrical field. However the electron and hole field heating can reverse the drift direction [1]. This non-obvious phenomenon is named reversed drift. Till now it was observed only in germanium [1] and indium antimonide [2]. Here we present a calculation of electron-hole pair drift velocity and the reversed drift observation in silicon. We used the SOI structures. Their properties ensured the experiment simplicity.

Keywords

Drift Velocity Current Rise Indium Antimonide Drift Direction Pair Concentration 
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References

  1. 1.
    Prior, A.C. (1960) A reversed carrier transport effect in germanium. Proc. Phys. Soc. 76, 465–480.CrossRefGoogle Scholar
  2. 2.
    Tosima, S. and Ando, K. (1967) Hot carrier double injection in n-InSb. J. Phys. Soc. Japan 23, 812–819.CrossRefGoogle Scholar
  3. 3.
    Lampert, M.A. and Mark, P. (1970) Current Injection in Solids, Academic Press, New York and London.Google Scholar
  4. 4.
    Canali, C., Majni, G., Minder, R., and Ottaviani, G. (1975) Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Trans. Electron Devices ED-22, 1045–1047.CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • V. N. Dobrovolsky
    • 1
  • L. V. Ishchuk
    • 1
  • G. K. Ninidze
    • 1
  1. 1.Department of RadiophysicsKiev UniversityKievUkraine

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