Electron-Hole Pair Reversed Drift in SOI Structure
It is known that in the n-semiconductor electron-hole pairs generally drift along the electrical field. However the electron and hole field heating can reverse the drift direction . This non-obvious phenomenon is named reversed drift. Till now it was observed only in germanium  and indium antimonide . Here we present a calculation of electron-hole pair drift velocity and the reversed drift observation in silicon. We used the SOI structures. Their properties ensured the experiment simplicity.
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