Electron-Hole Pair Reversed Drift in SOI Structure
It is known that in the n-semiconductor electron-hole pairs generally drift along the electrical field. However the electron and hole field heating can reverse the drift direction . This non-obvious phenomenon is named reversed drift. Till now it was observed only in germanium  and indium antimonide . Here we present a calculation of electron-hole pair drift velocity and the reversed drift observation in silicon. We used the SOI structures. Their properties ensured the experiment simplicity.
KeywordsDrift Velocity Current Rise Indium Antimonide Drift Direction Pair Concentration
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