Abstract
This paper discusses new potentialities of oxidized porous silicon (PS) based SOI structures that have hitherto escaped attention of the researchers. Oxidized PS (OPS) has the property of controlling its characteristics depending on regimes of formation of PS layer and its further oxidation. The manner by which electrical and optical properties of the OPS layer may be varied with oxidation regimes of PS layers with various porosities is presented. It is of great importance that oxidized PS regions of different characteristics (porosity, thickness etc.) may be formed simultaneously within the same wafer.
The paper points out the meaning of oxidized PS. It is emphasized, by one way or another, that oxidized PS involves a whole series of dissimilar materials. PS may be oxidized either completely or partially and the formed POS layer will have its properties depending on both the oxidizing regimes and the parameters of initial PS. The kinetics of PS oxodation and densification, the electrical and optical parameters of the material obtained and the feasibility to dope OPS with a desirable dopant are presented.
Dopants in OPS are considered on the example of rare-earth elements.
In addition, consideration is given to the ideas of on-chip integration PS-based SOI with different PS-based micro- and optoelectronic devices.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Watanabe, Y., Sakai, T. (1972) Semiconductor Device and method of producing the same. Jap. Patent 49–19030 (US Patent 3640806).
Hirosy, S., Watanabe, Y., Arita, M, Asaoka, K., (1978) Semiconductor devices. Jap. Patent Appl. 53–45675.
Sakurdi, T., Ukami, T. (1981) Method of manufacturing the semiconductor devices. Jap. Patent Appl. 52–84968.
Pogge, H.B. (1975) Method of fabricating semiconductor device embodying dielectric isolation. US Patent 3919060.
Magdo, I. E., Magdo, S., Nestork, W.J. (1976) Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation. US Patent 3954523.
Pogge, H.B. (1978) Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation. US Patent 4104090.
Imai, K. (1983) Semiconductor devices and method of manufacturing the same. US Patent 4393577.
Imai, K., Unno, H. (1984) FIPOS technology and its application to LSI’s. IEEE Trans.Electron.Dev. 31, 297–302.
Mano, T., Baba, T., Sawada, H., Imai, K. (1982) FIPOS CMOS 16K-bit static RAM. Technical Digest Symp. on VLSI Technology, 12.
Ehara, K., Unno, H., Muramoto, S. (1985) 1,5 μm FIPOS/CMOS VLSI process with low wafer warpage and Si deposit-defect-free. Electrochem.Soc.Ext.Abs. 85, 457.
Frye, R.C. (1983) Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation. US Patent 4380865.
Konaka, S., Tabe, M., Sakai, T. (1982) A new silicon-on-insulator structure using a silicon molecular beam epitaxial growth on porous silicon. Appl.Phys.Lett. 41, 86–88.
Lin, T.L., Chen, S.C., Wang, K.L., Iyar, S. (1986) Si-MBE SOI. Mat.Res.Soc.Proc. 53, 193–197.
Bomchil, G., Halimaoui, A., Herino, R. (1989) Procede de fabrication d’une structure de silicium sur isolant. Patent of France 2620571.
Kinney, W.I., Lasky, J.B., Nesbit, L.A. (1985) Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer. US Patent 4532700.
Zorinsky, E.J., Spratt, D.B. (1986) Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon. US Patent 4628591.
Holmstrom, R.P., Chi, W.J-Y. (1986) Method of forming an isolated semiconductor structure. US Patent 4627883.
Yonehara, T. (1994) Semiconductor member and process for preparing semiconductor member. US Patent 5371037.
http://www.canon.co.jp/ELTRAN
Tsao, S.S. (1987) Porous Silicon Techniques for SOI Structures. IEEE Circuit & Device Magazine 3, 3–7.
Matloubian, M., Zorinsky, E.J., Spratt, D. (1986) Total dose radiation characteristics of SOI mosfets fabricated using islands technology. IEEE Transactions on Nuclear Science 35, 1650–1652.
Zorinsky, E.J., Spratt, D.B., Virkus R.L. (1986) The “islands” method — a manufacturable porous silicon SOI technology. Technical Digest of IEDM, 431–434.
Barla, K., Bomchil, G., Herino, R., Monroy, A. (1987) SOI Technology Using Buried Layers of Oxidized Porous Si. IEEE Circuit & Device Mago 3, 11–14.
Thomas, N.J., Davis, J.R., Keen, J.M., Castledine, J.G., Brumhead, D., Goulding, M., Alderman, J., Farr, J.P.G., Earwaker, L.G., L’Ecuyer, J., Stirland, I.M., Cole, J.M. (1989) High-Performance Thin-Film Silicon-on-Insulator CMOS Transistors in Porous Silicon. IEEE Elect.Dev.Let. 10, 129–131.
Bondarenko, V.P., Yakovtseva, V.A., Dolgyi, L.N Dorofeev, A., Vorozov, N., Troyanova, G. (1994) SOI — structures based on oxidized porous silicon. Microelektronika 23, 61–68 (in Russian).
Bondarenko, V.P., Bogatirev, Y.V., Dolgyi, L.N., Dorofeev, A.M., Panfilenko, A.K., Shvedov, S.V., Troyanova, G.N., Vorozov, N.N., Yakovtseva, V.A. (1995) 1.2 μm CMOS/SOI on porous silicon, in J.P. Colinge, A.N. Nazarov (eds.). Physical and Technical Problems of SOI Structures and Devices, Kluwer Academic Publishers, Dordrecht, pp.275–280.
Balucani, M., Bondarenko, V., Dolgyi, L.N., Ferrari, A., Lamedica, G., Yakovtseva, V.A. (2000) Process for forming structures with different conductivity showing a hyperfine transition region, for forming porous silicon. International Patent: PCT/IT00/00329
Balucani, M., Bondarenko, V., Dolgyi, L.N., Ferrari, A., Lamedica, G., Yakovtseva, V.A. (2000) Process for the two-step selective anodization of a semiconductor layer for forming porous silicon. International Patent: PCT/IT00/000330
Balucani, M., Bondarenko, V., Ferrari, A., Lamedica, G., Panfilenko, A.K., Yakovtseva, V.A. (2000) Process for the forming of isolation layers of a predetermined thickness in semiconductors wafers for the manufacturing of integrated circuits. International Patent: PCT/IT00/00331
Romanow, S.I., Dvurechenskii, A.V., Kirienko, V.V, Grötschel, R., Gutakovskii, A., Sokolov, L.V., Lamin, M.A. (2000) Homoepitaxy on porous silicon with a buried oxide layer: full-wafer scale SOI. in H.L.F. Hemment, V.S. Lysenko, A.N. Nazarov (eds). Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, Kluwer Academic Publishers, Dordrecht, pp.29–46.
Balucani, M., Bondarenko, V., Lamedica, G., Ferrari, A. (2000) Opto-electronic Silicon On Insulator integrated circuits by porous silicon technology. Electronic Group Meeting, Parma 9/06/2000.
Yamanaka, H., Sakamoto, M. (1975) Oxygen sensitivity of porous silicon formed by anodic reaction. Jap.J.Appl.Phys. 14, 303–304.
Imai, K., Yashiro, T. (1976) Oxidized Porous Silicon-Silicon Interface Investigation by C-V Method. Jap.J.Appl.Phys. 15, 553–554.
Arita, Y., Kuranari, K., Sunohara, Y. (1976) Thermal behavior of porous silicon Jap.J.Appl.Phys. 15, 1655–1664.
Unagami, T. (1980) Oxidation of Porous Silicon and Properties of Its Oxide Film. Jap.J.Appl.Phys. 19, 231–241.
Aboaf, J.A., Broadie, R.W., Pliskin, W.A. (1977) Integrated circuit isolation structure and method for producing the isolation structure. US Patent 4016017.
Yon, J.J., Barla, K., Herino, R., Bomchil, G. (1987) The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrates. J.Appl.Phys. 62, 1042–1048.
Barla, K., Herino, R., Bomchil, G. (1986) Stress in oxidized porous silicon layers. J.Appl.Phys. 59, 439.
Pickering, C., Beale, M.I., Robbins, D.J, Pearson, P.J., Greef, R. (1985) Optical properties of porous silicon films. Thin Solid Films 125, 157–163.
Burkhardt, P.J., Robert, M. (1977) Porous silicon dioxide moisture sensor and method for manufacture of a moisture sensor. US Patent 4057823.
Schechter, I., Ben-Chorin, M., Kux, A. (1995) Gas Sensing Properties of Porous Silicon. Anal. Chem. 67, 3727–3732.
Balucani, M., Bondarenko, V., Dolgyi, L. La Monica, S., Masini, G., Yakovtseva, V., Ferrari, A. (1997) Humidity Sensor on Partially Oxidized Porous Silicon. Solid State Phenomena 54, 75–83.
Sailor, M.J. (1997) Sensor applications of porous silicon, in L. Canham (eds.). Properties of porous silicon. EMIS Datareviews Series No 18, INSPEC, The Institution of Electrical Engineers, London, pp. 364–370.
Theiss, W., Hilbrich, S. (1997) Refractive index of porous silicon, in L. Canham (eds.). Properties of porous silicon. EMIS Datareviews Series No 18, INSPEC, The Institution of Electrical Engineers, London, pp. 223–228.
Yakovtseva, V., Dolgyi, L., Vorozov, N., Kazuchits, N., Bondarenko, V., Balucani, M., Lamedica, G., Franchina, L., Ferrari, A. (2000) Oxidized Porous Silicon: From Dielectric Isolation to Integrated Optical Waveguides. J.of Porous Materials 7, 215–222.
Benson, T.M., Arrand, H.F., Sewell, P., Niemeyer, D., Loni, A., Bozeat, R.J., Krüger, M., Arens-Ffischer, R., Thönissen, Lüth, H. (1999) Progress towards achieving integrated circuit functionality using porous silicon optoelectronic components. Materials Science and Engineering B69-70, 92–99.
Bondarenko, V., Dolgyi, L., Dorofeev, A., Kazuchits, N., Leshok, A., Troyanova, G., Vorozov, N., Maiello, G., Masini, G., La Monica, S., Ferrari, A. (1997) Porous silicon as low-dimensional host material for erbium-doped structures. Thin Solid Films 297, 48–52.
Bondarenko, V.P., Vorozov, N., Dolgyi, L., Yakovtseva, V., Petrovich, V., Volchek, S., Kazuchits, N., Grom, G., Lopez, N.A., Tsybeskov, L., Fauchet, P.M. (1999) Formation and luminescent properties of oxidized porous silicon doped with erbium by electrochemical procedure. Mat.Res.Soc.Symp.Proc. 536, 69–74.
Bondarenko, V.P., Yakovtseva, V.A. (1997) Optoelectronic applications of porous silicon, in L. Canham (eds.). Properties of porous silicon. EMIS Datareviews Series No 18, INSPEC, The Institution of Electrical Engineers, London, pp. 356–363.
Miller, R.O. (1990) Method of making a silicon integrated circuit waveguide. US Patent 4927781.
Bondarenko, V.P., Dorofeev, A.M. (1995) Why porous silicon for SOI? in J.P. Colinge (eds.) Physical and Technical Problems of SOI Structures and Devices, Kluwer Academic Publishers, Netherlands, pp. 15–26.
Bondarenko, V.P., Yakovtseva, V.A. (1997) Microelectronic applications of porous silicon, in L. Canham (eds.). Properties of porous silicon. EMIS Datareviews Series No 18, INSPEC, The Institution of Electrical Engineers, London, pp. 343–348.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Bondarenko, V. et al. (2002). Oxidized Porous Silicon Based SOI: Untapped Resources. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_24
Download citation
DOI: https://doi.org/10.1007/978-94-010-0339-1_24
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0576-3
Online ISBN: 978-94-010-0339-1
eBook Packages: Springer Book Archive