Abstract
Yttria-stabilized zirconia (YSZ) films were used as insulator layers in silicon-on-insulator structures. YSZ films on Si substrates were grown epitaxially by “off-axis” rf magnetron sputtering of a single-crystal YSZ target. Then Si films were grown on YSZ by molecular beam epitaxy. Current-voltage characteristics of the Si/YSZ/Si(100) and YSZ/Si(100) structures were measured, and breakdown voltages and electric fields were determined. It was found that a thin SiO2 layer between the YSZ film and the Si substrate prepared by anodic-plasma oxidation of the Si substrate through the grown YSZ film improves crucially the breakdown voltage of the structures.
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References
Beshenkov, V.G., Znamenskii, A.G., and Marchenko, V.A. (1998) Perfect Fianit Films (ZrO2+Y2O3) on Silicon (100). Surface Investigation, 14, 61–65.
Beshenkov, V.G., Marchenko, V.A., and Znamenskii, A.G. (1994) Silicon Anodic-Plasma Oxidation During Magnetron Sputtering of Yttria-Stabilized Zirconia. Appl. Phys. Lett. 65, 156–158.
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© 2002 Springer Science+Business Media Dordrecht
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Beshenkov, V.G. et al. (2002). MBE Growth of the top Layer in Si/YSZ/Si Structure. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_2
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DOI: https://doi.org/10.1007/978-94-010-0339-1_2
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-0576-3
Online ISBN: 978-94-010-0339-1
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