Abstract
The recent take off of SOI technology for VLSI applications is explained by combined effects : huge progress in SOI substrates (cost and quality), relative easiness to transpose classical CMOS processing on partially depleted SOI, and inherent gains in performance and power dissipation [1]. However, the use of SOI is far from being limited to classical CMOS and offers a whole range of new possibilities, in the domain of alternative materials as well as for conceiving innovative SOI-specific devices. Our interest in wafer characterization is focused on the Pseudo-MOSFET [2] and its applications. On the device side, we conceive, simulate and characterize ultimate or novel SOI components.
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© 2002 Springer Science+Business Media Dordrecht
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Allibert, F., Pretet, J., Ernst, T., Jomaah, J., Cristoloveanu, S. (2002). Characterization and Modeling of Advanced SOI Materials and Devices. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_18
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DOI: https://doi.org/10.1007/978-94-010-0339-1_18
Publisher Name: Springer, Dordrecht
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