Abstract
Silicon-on-insulator (SOI) layers showed their perspectives of application in cryogenic electronics [1]. An aim of the studies presented was to investigate perspectives of their use in the development of mechanical and temperature sensors for operation at cryogenic temperatures. The laser recrystallization represents a technique providing adjustment of the electrical and piezoresistive parameters of polysilicon layers. That is why such a method has been used in the studies presented.
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© 2002 Springer Science+Business Media Dordrecht
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Druzhinin, A., Lavitska, E., Maryamova, I., Khoverko, Y. (2002). Laser-Recrystallized SOI Layers for Sensor Applications at Cryogenic Temperatures. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_17
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DOI: https://doi.org/10.1007/978-94-010-0339-1_17
Publisher Name: Springer, Dordrecht
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