Similarity Relation for I-V Characteristics of FETs with different Channel Shape

  • V. N. Dobrovolsky
  • M. Balucani
  • A. Ferrari
Chapter
Part of the NATO Science Series book series (NAII, volume 58)

Abstract

Depending on the FET application, its channel shape may be different [1–5]. However, for all FET types the theory has been developed only in the simplest case of a rectangular transistor channel. Therefore there is a problem of calculating the characteristics of FETs with another channel shape. The similarity relation, obtained in this paper, solves the above problem.

Keywords

GaAs 

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Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • V. N. Dobrovolsky
    • 1
  • M. Balucani
    • 2
  • A. Ferrari
    • 2
  1. 1.Department of RadiophysicsKiev UniversityKievUkraine
  2. 2.INFM Unit E6 - Department of Electronic EngineeringRome University “La Sapienza”RomeItaly

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