Similarity Relation for I-V Characteristics of FETs with different Channel Shape

  • V. N. Dobrovolsky
  • M. Balucani
  • A. Ferrari
Part of the NATO Science Series book series (NAII, volume 58)


Depending on the FET application, its channel shape may be different [1–5]. However, for all FET types the theory has been developed only in the simplest case of a rectangular transistor channel. Therefore there is a problem of calculating the characteristics of FETs with another channel shape. The similarity relation, obtained in this paper, solves the above problem.


Similarity Relation Drain Current Silicon Film Drain Voltage Wafer Fabrication 
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Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • V. N. Dobrovolsky
    • 1
  • M. Balucani
    • 2
  • A. Ferrari
    • 2
  1. 1.Department of RadiophysicsKiev UniversityKievUkraine
  2. 2.INFM Unit E6 - Department of Electronic EngineeringRome University “La Sapienza”RomeItaly

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