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Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures

  • A. N. Nazarov
  • V. I. Kilchytska
  • I. P. Barchuk
Chapter
Part of the NATO Science Series book series (NAII, volume 58)

Abstract

The electron injection processes in the silicon-on-insulator (SOI) devices affect strongly the reliability of device operation [1]. Usually the buried oxide (BOX)/silicon film interface shows worse structural and electrical properties than that of the gate oxide/silicon film interface [2]. This leads to enhanced charge trapping and degradation of the BOX during SOI device operation. Therefore, the promising perspectives of SOI devices for some applications (especially for high-voltage and high-temperature devices) are often limited by carrier injection processes in the BOX.

Keywords

Electron Injection Gate Oxide Film Interface Electron Trapping Charge Trapping 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media Dordrecht 2002

Authors and Affiliations

  • A. N. Nazarov
    • 1
  • V. I. Kilchytska
    • 1
  • I. P. Barchuk
    • 1
  1. 1.Institute of Semiconductor PhysicsNational Academy of Sciences of UkraineKievUkraine

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