Abstract
Silicon-on-Insulator (SOI) technology has experienced significant growth during the past few years. Among the SOI fabrication methods, Separation by Implantation of Oxygen (SIMOX) technology producing thin layer SOI material was first to reach the maturity required for main stream VLSI CMOS applications [1, 2]. At its early years SIMOX was believed to be expensive and inaccessible due to the necessity of utilizing specialized equipment to implant high oxygen doses and non-standard post-processing. Progress in equipment and process development [3,4,5] led to the improvements in material quality and manufacturability [6]. Successful manufacture of CMOS circuits in SIMOX stimulated growth of interest in using all SOI materials. At present, at its maturity, SIMOX is perceived to offer a relatively simple manufacturing process of thin layer SOI substrates of extremely competitive quality and cost.
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G. Shahidi, A. Ajmera, F. Assederaghi, R. Bolam, A. Bryant, M. Coffey, H. Hovel, J. Lasky, E. Leobandung, H.S. Lo, M. Maloney, D. Moy, W. Raush, D. Sadana, D. Schepis, M. Sherony, J. Sleight, L.F. Wagner, K. Wu, B. Davari, T.C. Chen (1999) Mainstreaming of the SOI Technology. Proc. 1999 Int. IEEE/SOI Conf. ISBN 0-7803-5456-7, 1–4.
E. Leobandung, E. Barth, M. Sherony, S.H. Lo, R. Schultz, W. Chu, M. Khare, D. Sadana, D. Shepis, R. Bolam, J. Sleight, F. White, F. Assaderaghi, D. My, G. Biery, R. Golfblatt, T.C. Chen, B. Davari, G. Shahidi (1999) High Performance 0.18 urn SOI CMOS Technology, in 1EDM Tech, Digest, ISBN 0-7803-5410-9, IEDM99-679-682.
G. Ryding, T.H. Smick, M. Farley, B.F. Cordts, R.P. Dolan, L.P. Allen, B. Mathews, W. Wray, B. Amundsen, M.J. Anc (1996) The Ibis 1000 SIMOX Production Implanter. Proc. Int Conf. on Ion Implantation Technology, Austin. TX.
The Electmchem. Sot: Proc. Series vol PV99-3, ISBN 1-56677-225-7, (1999)
Proc. 2000 Int. IEEE/SOI Conf. ISBN 0-7803-6389-2, (2000)
For review: M.J. Anc, D.K. Sadana (1999) Technology and Properties of SIMOX. in Properties of Crystalline Silicon. EMIS Datareviews Series. Eds. R. Hull, S.S. Iyer, Chapter 18.9.
S. Nakashima, N. Ohwada, T. Katayama, Y. Miyamura, A. Matsuzaki, M. Imai, K. Izumi (1994) Thickness increment of buried oxide in a SIMOX wafer by high temperature oxidation. Proc. Int. IEEE/SOI Conf, ISBN 0-7803-2406-4, 71–72
T. Katayama, Y. Miyamura, M. Kataoka, M. Danbata, M. Imai, S. Nakashima, N. Ohwada (1994) ibid.. 75–76.
A. Matsumura, K. Kawamura, T. Mizutani, S. Takayama, I. Hamaguchi, Y. Nagatake (1999) Recent progress in low-dose SIMOX wafers fabricated with Internal Thermal Oxidation (ITOX) process. The Electmchem. Soc. Proc. Series vol PV99-3, ISBN 1-56677-225-7, 79–92.
S. Nakashima, K. Izumi J. Mat. Res. Vol. 5, No.9, Sept.1990, 1918–1922.
Y. Li, J.A. Kilner, R.J. Chater, P.L.F. Hemment, A. Nejim, A.K. Robinson, K.J. Reeson, C.D. Marsh, G.R. Booker (1992) The Effects of Dose and Target Temperature on the Low Energy (70 keV) SIMOX layers, in Silicon-on-Insulator Technology and Devices /1992, K. Izumi Editor, PV92-13, 368–387.
M.J. Anc, R.P. Dolan, J. Jiao, T. Nakai (1999) Thin-layer SIMOX for Future Applications. Proc.1999 Int. IEEE/SOI Conf, ISBN 0-7803-5456-7, 106–107.
O.W. Holland et al. (1996) Appl. Phys. Lett. 69, 674–676.
L. Chen, S. Bagchi, S.J. Krause, P. Roitman (1999) Effect of Single-Step, High-Oxygen-Concentration Annealing on Buried Oxide Layer Microstructure in Post-Implant-Amorphized, Low-Dose SIMOX Material. Proc. 1999 Int. IEEE/SOI Conf, ISBN 0-7803-5456-7, 123–124.
R.P. Dolan, M. Alles, M. Anc, B. Cordts, J. Dunne, M. Gindlesperger, W. Hornblower, T.Y. Yang, M. Powell, J. Blake, T. Nakai (2000) Medium-Dose SIMOX Quality Improvement for Advanced CMOS Applications, in Proc. Int. 2000 IEEE/SOI Conference, ISBN 0-7803-6389-2, 46–47.
S.T. Liu, L.P. Allen, M.J. Anc, W.C. Jenkins, H.L. Huges, M.E. Twigg, R.K. Lawrence (1997) Reduction of Radiation-induced Back-channel Threshold-voltage Shifts in Partially-depleted SIMOX Devices by Using ADVANTOX Substrates. IEEE Trans, on Nucl. Science, 44, (6), 2101–2105.
J. Margail, J.M. Lamure, J. Stoemenos, A.M. Papon (1992) Defects in SIMOX structures: Characterization and Some Formation Mechanisms, in The Eleclrochem. Soc. Proc. Series PV 92-13, 207–220.
D.K. Sadana (1996) Invisible defects in SOI, their process dependence and characterization, in The Electmchem. Soc. Series PV 96-3, 3–17.
L.P. Allen, M.J. Anc, M. Duffy, J.H. Parechanian, J.H. Yap (1996) Electrochemical Analysis of SIMOX buried oxides. The Electmchem. Soc. Series PV 96-3, p. 18–27.
S. Cristoloveanu, S.S Li (1995) Electrical Characterization of Silicon-on-Insulator Materials and Devices. Kluwer Academic Publishers, Boston.
W.P. Maszara, R. Dockerty, C. Gondran, P.K. Vasudev (1997) SOI materials for mainstream SOI technology, in The Electmchem. Soc. Proc. Series vol PV97-23, 15–26.
M.A. Mendicino, (1999) Comparison of properties of available SOI materials. Eds. R. Hull, S.S. Iyer, Properties of Crystalline Silicon EMIS Datareviews Series, Chapter 18.10.
For review: S. Krause, M. Anc, P. Roitman (1998) Evolution and Future Trends of SIMOX material. MRS Bulletin, 23, No.12, 25–29 and references therein.
A.G. Revesz, H.L. Hughes (1997) Properties of buried oxide layer in SIMOX. Microelectr. Eng. 36, 343
V.V. Afanas’ev, A. Stesmans, A.G. Revesz, H.L. Hughes (1997) Structural inhomogenity and silicon enrichment of buried SiO2 layers formed by oxygen implantation in silicon. J. Appl. Phys 82(5), 2184 (1997)
V.V. Afanas’ev, A.G. Revesz, G.A. Brown, H.L. Hughes (1994) Deep and Shallow Electron Trapping in the Buried Oxide Layer of SIMOX Structures. J. Electmchem. Soc. 141(10), p. 2801.
V.V. Afanas’ev, A.G. Revesz, H.L. Hughes (1996) Confinement Phenomena in Buried Oxides of SIMOX Structures as Affected by Porcessing. J. Electmchem. Soc. 143(2), 695
Semiconductor Industry Association International Technology Roadmap for Semiconductors, 1999.
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Anc, M.J. (2002). Perspectives of Simox Technology. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_1
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DOI: https://doi.org/10.1007/978-94-010-0339-1_1
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