Abstract
In this work we studied a set of nominally undoped epitaxial InxGa1- XN wurtzite films grown on (0001) sapphire substrates. In order to separate the contribution of the strain and indium content in the phonon mode frequency, indium mole fraction was determined using a strain insensitive method, Rutherford backscattering spectroscopy (RBS). Strain was evaluated by comparing the lattice constants measured by X-ray diffraction (XRD) with the relaxed lattice parameters given by Vegard’s law. Samples with comparable indium content, but under different states of strain, were used as reference. This allowed the behaviour of the different Raman shift modes for both strain and composition to be independently established.
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© 2002 Springer Science+Business Media Dordrecht
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Correia, M.R., Pereira, S. (2002). Raman Spectroscopy Studies in InGaN/GaN Epitaxial Layers. In: Di Bartolo, B. (eds) Spectroscopy of Systems with Spatially Confined Structures. NATO Science Series, vol 90. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0287-5_48
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DOI: https://doi.org/10.1007/978-94-010-0287-5_48
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-1122-1
Online ISBN: 978-94-010-0287-5
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