Abstract
In the past few years, quantum dot (QD) structures have been gaining increasing interest due to their outstanding performance. One of the most important promises of QD nanotechnology is the increased tolerance to defects. Higher quantum efficiency becomes possible with the basic argument that localised carriers will exhibit reduced migration to non-radiative centres. Such property is advantageous for active layers in matrix materials with a higher number of structural defects. The tolerance to irradiation-induced defects is of crucial importance in atomic energy and space applications.
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© 2002 Springer Science+Business Media Dordrecht
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Cavaco, A. (2002). Study of Irradiation Defects in Quantum Structures of Semiconductors A3B5 . In: Di Bartolo, B. (eds) Spectroscopy of Systems with Spatially Confined Structures. NATO Science Series, vol 90. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0287-5_35
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DOI: https://doi.org/10.1007/978-94-010-0287-5_35
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-1122-1
Online ISBN: 978-94-010-0287-5
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