Abstract
The conduction band offset of an CdS/ZnSe single quantum well is about 820 meV which causes a good localisation of charge carriers in the CdS quantum well material. For the growth of the CdS/ZnSe heterostructures we use molecular beam epitaxy. The electrical characterisation of the samples is done by Van der Pauw and Hall Bar measurements to determine the charge carrier mobility of the heterostructures.
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© 2002 Springer Science+Business Media Dordrecht
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Dremel, M. (2002). Growth and electrical characterisation of CdS/ZnSe heterostructures. In: Di Bartolo, B. (eds) Spectroscopy of Systems with Spatially Confined Structures. NATO Science Series, vol 90. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0287-5_28
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DOI: https://doi.org/10.1007/978-94-010-0287-5_28
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-1122-1
Online ISBN: 978-94-010-0287-5
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