Abstract
For about one decade, Er doped Si attracted the attention of researchers with the aim to apply it to integrated silicon-based optoelectronic devices. In fact, Er emission falls into the band of minimum absorption losses of silica glass optical fibers used in telecommunications. The advantage of Er-doped Si consists in the possibility to increase significantly the effective cross section of excitation of the rare earth ions [1]. This enhancement is due to a strong band-to-band absorption of the pumping light in a wide spectral range followed by an Auger process in which electron-hole pairs recombine with the transfer of energy to the 4f-shell of Er. The excess energy is taken by free electrons or phonons. However, Er luminescence in a matrix of crystalline Si is characterized by a strong temperature quenching and can be hardly observed above 200 K. Temperature quenching is caused by the thermally activated de-excitation of Er resulting from reverse Auger process accompanied by energy back transfer. Therefore, the optical medium which favors the excitation of rare earth ions is not adequate as what concerns the emission process.
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7. References
Palm J., Gan F., Zheng B., Michel J., and Kimerling L.C. (1996) Electroluminescence of Er-doped silicon, Phys. Rev. B 54, 17603–17617.
Priolo F., Franzò G., Coffa S., and Camera A. (1998) Excitation and nonradiative deexcitation processes of Er3+ in crystalline Si, Phys. Rev. B 57, 4443–4454.
Franzò G., Vinciguerra V., and Priolo F. (1999) The excitation mechanism of rare-earth ions in silicon nanocrystals, Appl. Phys. A 69, 3–12.
Gusev O.B., Bresler M.S., Pak P.E., Yassievich I.N., Forcales M., Vinh N.Q., and Gregorkiewicz T. (2001) Excitation cross section of Er in semiconductor matrices under optical pumping, Phys. Rev. B 64, 075302-1-075302-7.
Bresler M.S., Gusev O.B., Zakharchenya B.P., and Yassievich I.N. (1996) Exciton excitation mechanism for Er ions in silicon, Phys. Solid State 38, 813–817.
Kik P.G., Brongersma M.L., and Polman A. (2000) Strong exciton-Er coupling in Si nanocrystal-doped SiO2, Appl Phys. Lett. 76, 2325–2327.
Miniscalco W.J. (1991) Er-doped glasses for fiber amplifiers at 1500 nm, Journ. Lightwave Techn. 9, 234–250.
Trwoga P.F., Kenyon A.J., and Pitt C.W. (1998) Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters, J. Appl. Phys. 83, 3789–3794.
Agranovich V.M. and Galanin M.D. (1982) Electronic excitation energy transfer in condensed media, North Holland, Amsterdam.
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Yassievich, I.N., Moskalenko, A.S., Gusev, O.B., Bresler, M.S. (2003). Excitation Mechanism of Er Photoluminescence in Bulk Si And SiO2 With Nanocrystals. In: Pavesi, L., Gaponenko, S., Dal Negro, L. (eds) Towards the First Silicon Laser. NATO Science Series, vol 93. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0149-6_36
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DOI: https://doi.org/10.1007/978-94-010-0149-6_36
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