Abstract
A good example of a recent advance in semiconductor technology with impact on laser technology is the quantum cascade laser (QCL), which nowadays can be operated at wavelengths in excess of 10 μm [1]. The maximum wavelengths achieved now are about 80 μm [2]. Many effort are now spent to implement the quantum cascade THz laser scheme in SiGe/Si heterostructures [3]. Here we discuss an alternative THz laser sources which is based on a simpler quantum well (QW) structures, i.e. a resonant-state laser (RSL) [4]. Population inversion in the p-Ge RSL is realized among shallow acceptor states, split under external stress (see previous chapter and [6]). Acceptor- doped Si1-xGex is very attractive for fabricating RSL because of its good thermal properties, low absorption in the THz range, well established, relatively cheap technology, as well as possible integration with Si-based electronics.
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Kagan, M.S. (2003). Thz Lasing Of Strained P-Ge And Si/Ge Structures. In: Pavesi, L., Gaponenko, S., Dal Negro, L. (eds) Towards the First Silicon Laser. NATO Science Series, vol 93. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0149-6_32
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DOI: https://doi.org/10.1007/978-94-010-0149-6_32
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