Abstract
One of the most probable ways towards silicon laser runs across solution of a complicated problem of material science — development of a reproducible technology for producing heterostructures with ultimately small-sized Ge quantum dots in Si. Dramatic progress has been already made in creating Si-based light-emitting diodes with Ge nanocrystalls incorporated into Si matrix (see for example Ref. [1]). These are called “Hut” and “Dome” — clusters. A great deal of recent research pursued in this field is focused on investigation of self-assembling processes of Ge nanocrystals by Stranski- Krastanov mechanism and effect of their self-ordering during heteroepitaxy. In this investigation attempts are made to find the ways for fabricating heterosystems with the smallest size of nanocrystalls and the highest degree of self-ordering of their ensembles in a substrate plane and in their dimensional homogeneity [2]. Recent record in minimizing nanocrystal size using a thin silicon oxide submonolayer is reported in Ref. [5]. Some data on the degree of GeSi cluster ordering on Si are also presented in Ref. [6]. However, it should be noted that clusters of minimal size (but no less than 10 nm) turn out to be poorly ordered whereas ordered clusters are large in size.
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Pchelyakov, O.P., Nikiforov, A.I., Olshanetsky, B.Z., Romanyuk, K.V., Teys, S.A. (2003). Mbe Of Si — Ge Heterostructures With Ge Nanocrystals. In: Pavesi, L., Gaponenko, S., Dal Negro, L. (eds) Towards the First Silicon Laser. NATO Science Series, vol 93. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0149-6_27
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DOI: https://doi.org/10.1007/978-94-010-0149-6_27
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