Dislocation-Based Silicon Light Emitting Devices
Silicon is by far the most commonly used and preferred semiconductor for the electronics industry, not least because of the much lower cost that results from, for example, cheaper substrates and the savings involved by the use of ultra large scale integration (ULSI) technology. Silicon’s main disadvantage is its inability to act as an efficient light emitter due to the indirect nature of the band gap.
KeywordsRecombination Boron Germanium Kelly Paral
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- Makita, Y. (1997), Proc. First NREL Conf., 3.Google Scholar
- European Commission (1998), Technology Roadmap, Optoelectronic interconnects for integrated circuits, Office for Official Publications of the European Communities, Luxembourg.Google Scholar
- Komoda, T., Kelly, J., Cristiano, F., Nejim, A., Hemment, P.L.F., Homewood, K.P., Gwilliam, R., Mynard, J.E., and Sealy, B.J. (1995) Visible photoluminescence at room temperature from microcrys-talline silicon precipitates in SiO2 formed by ion implantation, Nucl. Inst. & Meth. B 96, 387–391.ADSCrossRefGoogle Scholar
- Tybeskov, L., Moore, K.L., Hall, D.G., and Fauchet, P.M. (1996) Intrinsic band-edge photolumines-cence from silicon clusters at room temperature, Phys. Rev B 54, R8361-R8364.Google Scholar
- Hirth, J.P., and Lothe, J. (1982) Theory of Dislocations, John Wiley & Sons, New York.Google Scholar