Abstract
Efficient silicon light emitting diodes (LEDs) could allow “super-integration” of optical and electronic functions in high density silicon microelectronic circuits [1] and are consequently of considerable interest. However , performance with standard p-n junction emitters has been modest , with devices with electrical to light conversion efficiency in the 0.01–0 .1% range recentl y described as “high performance” [2]. Slightly better results have been obtained using approaches based on porous silicon [3], although this material is fragile and not fully compatible with standard microelectronics processing.
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Green, M.A., Zhao, J., Wang, A., Trupke, T. (2003). High Efficiency Silicon Light Emitting Diodes. In: Pavesi, L., Gaponenko, S., Dal Negro, L. (eds) Towards the First Silicon Laser. NATO Science Series, vol 93. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0149-6_1
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DOI: https://doi.org/10.1007/978-94-010-0149-6_1
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