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Electronic Structure of Doped and Irradiated Wide Band-Gap Crystals

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Book cover Physics of Laser Crystals

Part of the book series: NATO Science Series ((NAII,volume 126))

Abstract

This work is devoted to the development of ab initio calculation of the electronic structure of either clusters or doped and unperfected crystals. In addition, analysis of different experimental data for γ-irradiated pure and doped wide-band gap compounds is presented. Change in the spectroscopic properties of sapphire, perovskite, garnets and other doped compounds as well as ion oxidation state in pure and doped yirradiated crystals are discussed in detail using the X ray spectroscopy experimental results.

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Author information

Authors and Affiliations

  1. Kharkov National University for Radioelectronics, av. Shakespeare 6-48, 61045, Kharkov, Ukraine

    N. A. Kulagin

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  1. N. A. Kulagin
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Editors and Affiliations

  1. Institut de Physique Nucléaire, CNRS-IN2P3, Orsay, Paris, France

    Jean-Claude Krupa

  2. Kharkiv National University for Radioelectronics, Kharkiv, Ukraine

    Nicolay A. Kulagin

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© 2003 Springer Science+Business Media Dordrecht

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Kulagin, N.A. (2003). Electronic Structure of Doped and Irradiated Wide Band-Gap Crystals. In: Krupa, JC., Kulagin, N.A. (eds) Physics of Laser Crystals. NATO Science Series, vol 126. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0031-4_10

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  • DOI: https://doi.org/10.1007/978-94-010-0031-4_10

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-1676-9

  • Online ISBN: 978-94-010-0031-4

  • eBook Packages: Springer Book Archive

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