New Wire Silicon Slicing Technology for Solar Cell
Firstly a prototype machine using Multicutting wire technology (MCWT) is described. The influence of the main slicing parameters concerning machine and wires are given. Particularly fixed and free abrasive systems are compared. The possibility of cutting 180 slices 100 mm diameter 111 or 100 in the same run using 140 μm wires and free abrasive slurry is demonstrated, giving Kerf of about 180 μm. Actual taper, bow, roughness and damaged layer are suitable for the present solar cell technology. Further decreasing cost steps are comtemplated. Some points must be improved, mainly the knowledge of dynamic interaction between wires, slurry and silicon. The next step with be, in 1982, to cut a complete ingot (80 cms length ø 100 mm diameter or square shape) at a rate of 500 slices/run and 25 slices/cm.
KeywordsDiamond Coating Damage Layer Diamond Wire Groove Roller Prototype Machine
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