Summary
This paper discusses the deposition of thin films of copper indium diselenide for use in thin film CdS:CuInSe2 solar cells. For CuInSe2 deposition from a single source, we find that the films are generally deficient in copper and always stratified in composition. This stratification in composition renders the earlier reported results womewhat dubious and certainly accounts for the poor reproducibility of CdS:CuInSe2 solar cells fabricated in this way. The binary pairs Cu3Se2—InSe and Cu3Se2—In2Se3 have been co-evaporated in a hot-wall system with digital rate monitoring. The results of both experiments are reported, and it has been found that homogenous, single phase films of CuInSe2 can be formed by the co-evaporation of Cu3Se2 and In2Se3 at rates of 1–5 nm.s−1, producing films 0.1 – 1.0μm thick. The CuInSe2 films have been analysed using electron microprobe analysis, X-Ray diffractometry and X-Ray texture analysis, these results are presented.
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© 1981 ECSC, EEC, EAEC, Brussels and Luxembourg
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Don, E.R., Baber, S.R., Hill, R. (1981). Copper Indium Diselenide for CdS: CuInSe2 Solar Cells. In: Palz, W. (eds) Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-8423-3_147
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DOI: https://doi.org/10.1007/978-94-009-8423-3_147
Publisher Name: Springer, Dordrecht
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