Can Recombination Via Interfacial States in MIS Solar Cells be of Advantage?
In an MIS p-type solar cell with donor surface states, loss of photogenerated carriers can take place by band-band recombination via surface states. However, depending on the thickness of the insulating layer, electrons captured by the surface states may also tunnel into the metal, thus adding to the light-induced current. There is therefore a subtle balance between adverse and beneficial effects of the capture of electrons by surface states. This is explored in the present work.
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