Pulsed Electron Beam Annealing of Ion Implanted Germanium for Photovoltaic Devices

  • B. Sautreuil
  • A. Laugier
  • D. Barbier
  • A. Cachard
Conference paper

Summary

This paper deals with the application of short (50 ns) high energy, pulsed electron beam for shalbw p-n junction formation in implanted Germanium. From time-resolved spectroscopy achieved by means of analysis of diode current and voltage, energy deposition profiles are obtained on the basis of a Monte-Carlo simulation. Temperature-depth profiles are computed. Structure of the annealed samples are studied by R.B.S. plus channeling and2S.E.M. A good annealing is obtained for energy densities above 0.45 J/cm for 12-15 keV mean electron energy. The use of the Ge photovoltaic devices achieved by pulsed electron beam annealing is discussed in the case of Ge-GaAs bicolor systems.

Keywords

Graphite Recombination Tungsten Recrystallization GaAs 

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Copyright information

© ECSC, EEC, EAEC, Brussels and Luxembourg 1982

Authors and Affiliations

  • B. Sautreuil
    • 1
  • A. Laugier
    • 1
  • D. Barbier
    • 1
  • A. Cachard
    • 2
  1. 1.Laboratoire de Physique de la MatièreInstitut National des Sciences Appliquées de LyonVilleurbanne CedexFrance
  2. 2.Département de Physique des MatériauxUniversité Claude Bernard — Lyon IVilleurbanne CedexFrance

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