Pulsed Electron Beam Annealing of Ion Implanted Germanium for Photovoltaic Devices
This paper deals with the application of short (50 ns) high energy, pulsed electron beam for shalbw p-n junction formation in implanted Germanium. From time-resolved spectroscopy achieved by means of analysis of diode current and voltage, energy deposition profiles are obtained on the basis of a Monte-Carlo simulation. Temperature-depth profiles are computed. Structure of the annealed samples are studied by R.B.S. plus channeling and2S.E.M. A good annealing is obtained for energy densities above 0.45 J/cm for 12-15 keV mean electron energy. The use of the Ge photovoltaic devices achieved by pulsed electron beam annealing is discussed in the case of Ge-GaAs bicolor systems.
KeywordsJunction Depth Diode Current Implantation Condition Conduction Heat Flow Good Annealing
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