Pulsed Electron Beam Annealing of Ion Implanted Germanium for Photovoltaic Devices
This paper deals with the application of short (50 ns) high energy, pulsed electron beam for shalbw p-n junction formation in implanted Germanium. From time-resolved spectroscopy achieved by means of analysis of diode current and voltage, energy deposition profiles are obtained on the basis of a Monte-Carlo simulation. Temperature-depth profiles are computed. Structure of the annealed samples are studied by R.B.S. plus channeling and2S.E.M. A good annealing is obtained for energy densities above 0.45 J/cm for 12-15 keV mean electron energy. The use of the Ge photovoltaic devices achieved by pulsed electron beam annealing is discussed in the case of Ge-GaAs bicolor systems.
KeywordsGraphite Recombination Tungsten Recrystallization GaAs
Unable to display preview. Download preview PDF.
- (3).J. Michel, D. Barbier, A. Laugier: Proceed, of 5th IEEE Phot. Volt. Spec. Conf. Orlando, 1007, 1981.Google Scholar
- (4).G. Della Mea, G. Foti, G. Mani: in Laser-Solid Interactions and Laser processing, MRS 1978, AIP 317, 1979Google Scholar
- (5).D. Barbier, M. Baghdadi, A. Laugier, E. Vicario: J.Microsc.Spectros. Electr. 6, 513, 1981Google Scholar
- (6).SPI-300 T.M. from SPIRE Corp.Google Scholar