Pulsed Electron Beam Annealing of Ion Implanted Germanium for Photovoltaic Devices

  • B. Sautreuil
  • A. Laugier
  • D. Barbier
  • A. Cachard
Conference paper


This paper deals with the application of short (50 ns) high energy, pulsed electron beam for shalbw p-n junction formation in implanted Germanium. From time-resolved spectroscopy achieved by means of analysis of diode current and voltage, energy deposition profiles are obtained on the basis of a Monte-Carlo simulation. Temperature-depth profiles are computed. Structure of the annealed samples are studied by R.B.S. plus channeling and2S.E.M. A good annealing is obtained for energy densities above 0.45 J/cm for 12-15 keV mean electron energy. The use of the Ge photovoltaic devices achieved by pulsed electron beam annealing is discussed in the case of Ge-GaAs bicolor systems.


Junction Depth Diode Current Implantation Condition Conduction Heat Flow Good Annealing 
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  1. (1).
    A. Gat, J.F. Gibbons, T.J. Magee, J. Peng, V.R. Deline, P. Williams, C.A. Evans: Appl.Phys.Lett. 32, 276, 1978CrossRefGoogle Scholar
  2. (2).
    A.C. Greenwald, A.R. Kirkpatrick, R.G. Little, J.A. Minucci: J. Appl.Phys. 50, 783, 1979CrossRefGoogle Scholar
  3. (3).
    J. Michel, D. Barbier, A. Laugier: Proceed, of 5th IEEE Phot. Volt. Spec. Conf. Orlando, 1007, 1981.Google Scholar
  4. (4).
    G. Della Mea, G. Foti, G. Mani: in Laser-Solid Interactions and Laser processing, MRS 1978, AIP 317, 1979Google Scholar
  5. (5).
    D. Barbier, M. Baghdadi, A. Laugier, E. Vicario: J.Microsc.Spectros. Electr. 6, 513, 1981Google Scholar
  6. (6).
    SPI-300 T.M. from SPIRE Corp.Google Scholar
  7. (7).
    P.D. Maycok: Sol.St.Electr. 10, 161, 1967CrossRefGoogle Scholar
  8. (8).
    B. Sautreuil, A. Laugier: Solar Energy Mat-5, 21. 1981CrossRefGoogle Scholar

Copyright information

© ECSC, EEC, EAEC, Brussels and Luxembourg 1982

Authors and Affiliations

  • B. Sautreuil
    • 1
  • A. Laugier
    • 1
  • D. Barbier
    • 1
  • A. Cachard
    • 2
  1. 1.Laboratoire de Physique de la MatièreInstitut National des Sciences Appliquées de LyonVilleurbanne CedexFrance
  2. 2.Département de Physique des MatériauxUniversité Claude Bernard — Lyon IVilleurbanne CedexFrance

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