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Comparison between Various Ion Beam Doping Procedures and Anneal Techniques Used in Manufacturing Silicon Solar Cells

  • J. C. Muller
  • A. Mesli
  • P. Siffert
  • J. Com-NouguÉ
  • C. Tessari
  • J. P. Dumas

Summary

Conventional ion implantation of phosphorus and ion incrustation (non mass separated PF5 molecular ions), have been used to realize the N+ layer of single cristalline silicon solar cells. Various regrowth techniques have been investigated: classical thermal treatment, laser annealing in the liquid and solid phase regimes and election beam annealing. A systematic investigation by DLTS has allowed the determination of the optimal conditions of the post thermal treatment. Finally, large scale cells ( ≤ 10 cm2) have been prepared by using industrial processes and efficiencies higher than 13% have been measured for the two doping procedures. These techniques are presently applied to polycrystalline silicon from various sources. The first results obtained on solar cells elaborated with these materials, in particular the silicon under development at Laboratoires de Marcoussis are given in the paper.

Keywords

Silicon Solar Cell Laser Annealing Residual Defect DLTS Spectrum Pulse Annealing 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© ECSC, EEC, EAEC, Brussels and Luxembourg 1982

Authors and Affiliations

  • J. C. Muller
    • 1
  • A. Mesli
    • 1
  • P. Siffert
    • 1
  • J. Com-NouguÉ
    • 2
  • C. Tessari
    • 2
  • J. P. Dumas
    • 2
  1. 1.Groupe PHASECentre de Recherches NucléairesSTRASBOURG CedexFrance
  2. 2.Laboratoires de MarcoussisCentre de Recherches de la COMPAGNIE GENERALE D’ELECTRICITEMarcoussisFrance

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