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Antimony Sulphide Thin Films

  • J. S. Curran
  • R. Philippe
Conference paper

Summary

Antimony trisulphide has been prepared with n-type conductivity, in + the form of thin polycrystalline films. These films were obtained by a tarnishing, or gas-solid reaction between metallic antimony and sulphur vapour, and their properties studied by photoelectrochemical techniques. An analysis of photocurrent-voltage curves and photocurrent spectra allows an estimation of the following parameters: band-gap 1.62 eV, flat band potential -0.45 V (SCE) and donor density approximately 1014 cm-3. Spectroellipsometric measurements confirmed the high optical absorption coefficients previously reported for this material. Photovoltages of up to 400 mV have been observed, and monochromatic quantum yieds of over 60%. Preliminary experiments have indicated that photocorrosion may be suppressed in organic electrolytes.

Keywords

Flat Band Potential Sulphur Vapour Thin Polycrystalline Film Sulphide Thin Film High Optical Absorption Coefficient 
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References

  1. 1.
    A. Audzijonis and A. Karpus, Leit. Fiz. Rinkinys. 18 (1978) 127.Google Scholar
  2. 2.
    A.A. Agasiev et al. Sov. Phys. Semicond. 6 (1972) 560.Google Scholar
  3. 3.
    B. Roy et al., Solid State Comm, 25 (1978) 937.CrossRefGoogle Scholar
  4. 4.
    P. Bohac and P. Kaufmann, Mat. Res. Bull. 10 (1975) 613.CrossRefGoogle Scholar
  5. 5.
    M. Schoijet, Solar Energy Materials 1 (1979) 43.CrossRefGoogle Scholar
  6. 6.
    A. Gaumann, A. Orliukas and P. Bohac, Helv. Phys. Acta, 50 (1977) 773.Google Scholar
  7. 7.
    D.E. Aspnes, E. Kinsbron and D:D. Bacon, Phys. Rev. B 21 (1980) 3920.CrossRefGoogle Scholar
  8. 8.
    M.A. Butler, J. Appl. Phys. 48 (1977) 1914.CrossRefGoogle Scholar
  9. 9.
    G. Baccarini, B. Ricco and G. Spadini, J. Appl. Phys. 49 (1978) 5565.CrossRefGoogle Scholar
  10. 10.
    T.I. Chappell, IEEE Trans. Electron Devices, ED-27 (1980) 760.CrossRefGoogle Scholar
  11. 11.
    J.S. Curran, J. Electrochem. Soc. 127 (1980) 2063.CrossRefGoogle Scholar

Copyright information

© ECSC, EEC, EAEC, Brussels and Luxembourg 1982

Authors and Affiliations

  • J. S. Curran
    • 1
  • R. Philippe
    • 1
  1. 1.Laboratoire de Physicochimie des InterfacesEcole Centrale de LyonFrance

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