Influence of Plasma Si-Nttride Deposition on the Dark I-V Curves of MIS Contacts for Inversion Layer Solar Cells
The influence of the plasma Swiitride deposition process on electrical properties of Al/Si-oxide/p-Si MIS contacts was investigated. The Si-nitride was deposited onto the MIS diodes in a rf glow discharge by the reaction of SiH4 and MH3 usirjg parameters optimized for application to MES/inversion layer solar cells. The dark I-V curves before and after the plasma treatment were theoretically fitted with respect to the possible current mechanisms for MIS diodes. It was shown that the reverse saturation current of the difftjsion and thermoionic emission component is reduced by about one order of magnitude by the temperature treatment occuring during the plasma deposition. This lew reverse saturation current is in good agreement with the theoretical value of a minority carrier MIS diode.
KeywordsSilane Nitride Boiling Trichlorethylene ECSC
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