Abstract
Dissolution morphologies, in particular the apparition of curved surfaces, are discussed, both for the dissolution of spheres and of cavities. The theory of LACMANN, HEIMANN and FRANKE, based on hypotheses of the dissolution mechanisms on a molecular level is discussed, together with its experimental confirmations.
Crystal imperfections have a greater influence on dissolution than on growth kinetics. The preferential negative nucleation at edge dislocations is probably at the origin of etch pits.
Even for crystals with high solubilities, the dissolution kinetics are probably not perfectly bulk diffusion limited. The influence of impurities is described with emphasis on the importance of adsorption kinetics.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Friedel J., in Legons de Cristallographie, Blanchard., Paris, 1964
Frank F.C., in Growth and Perfection of Crystals3 Wiley, N. Y., 1962, p. 411
Frank F.C. and IVES M.B., J. Appl. Phys. 33(1960)1996
Batterman B.W., J. Appl. Phys. 18 (1957)1236
Lacmann R., Franke W. and Heimann R.,J, Cryst. Growth 26 (1974) 107
Lacmann R., Heimann R. and Franke W., J. Cryst. Growth 26 (1974) 117
For a general review of crystal dissolution see Heimann R., Auflosung von Kristallen, Springer, Wien, 1975
Franke W.R., Heimann R. and Lacmann R., J. Crystal Growth 28(1975)145
Heimann R., Franke W. R. and Lacmann R., J. Cryst. Growth 28 (1975)151
Gilman J.J., Johnston W. G. and Sears G.W., J. Appl. Phys. 29. (1958) 747
Cabrera N., Levine M.M. and Plaskett J.S., Phys. Rev. 96 (1954) 1153
Schaarwachter W., Phys. Stat. Sol. 12(1965)375
Sears G.W., J. Chem. Phys. 32 (1960) 1317
Friedel G., Bull. Soc. Fr. Min. Crist. 48 (1925)6
Barton A.F.M. and Wilde N.M., Trans. Farad. Soc. 67 (1971) 3590
Campbell J.R. and Nancollas G.M., J. Phys. Chem. 73 (1969) 1735
Bovington C.M. and Jones A.L., Trans. Farad. Soc. 66(1970)764
Christoffersen J., J. Cryst. Growth 49(1980)29
Haussuhl S., and Muller W., Kristall u. Technik 7(1972)533
Simon B., J. Cryst. Growth 52(1981)789
Bird R.B., Stewart W.E. and Lightfoot E.N., in Transport phenomena, Wiley, N. Y., 1960
Cabrera N. and Vermilyea D.A., in Growth and Perfection of Crystals, Wiley, N. Y., 1962
Steinike U., Z. Anorg. Allg. Chem. 317(1962)186
Ives M.B. and Hirth J.P., J. Chem. Phys. 33(1960)517
Mutaftschiev B., Chajes H. and Gindt R., in Adsorption et Croissance Cristalline, CNRS, Paris, 1965, p. 421.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1982 D. Reidel Publishing Company
About this paper
Cite this paper
Simon, B. (1982). Dissolution Phenomena. In: Mutaftschiev, B. (eds) Interfacial Aspects of Phase Transformations. NATO Advanced Study Institutes Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7870-6_25
Download citation
DOI: https://doi.org/10.1007/978-94-009-7870-6_25
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-009-7872-0
Online ISBN: 978-94-009-7870-6
eBook Packages: Springer Book Archive