Abstract
The actual formation of epitaxial layers may be far from what would be expected close to equilibrium. Considering the growth of three dimensional crystals on a substrate far from equilibrium, various kinetical processes are analyzed.
In fact, the actual crystal growth form (GF) rarely corresponds to the equilibrium form (EF). When surface self-diffusion is active on the grains, the GF tends to EF. In addition, when surface diffusion on the substrate is active, material exchange takes place between the grains (Ostwald ripening). Grains may also be mobile on the substrate. These two types of material exchange can induce either “static” or “dynamic”grain coalescence when two grains come in contact. Changes of epitaxial orientation of the grains can happen during these different processes.
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References
Kern, Le Lay G. and Metois J.J., in Current Topics in Materials Science, Vol. 3, ed. E. Kaldis, N.H. Pub. Co. 1979, p 178–419
Sundquist B.E., Acta Metal. 12 (1964) 67
Heyraud, J.J. Metois and J. of Cryst. Growth 50 (1980) 571; and Thin Sol. Films 75 (1981) 01
Metois J.J. and Heyraud J.C., Surface Science, (1981) in press.
Chakraverty B.K., J. phys. Chem. Solids, 28 (1967) 2401
Metois J.J., Gauch M., Masson A. and Kern R., Thin Solid Films 11 (1972) 205
Zanghi J.C., Metois J.J. and Kern R., Phil. Mag. 31 (1975) 743
Metois J.J., Heinemann K. and Poppa H., Phil. Mag. 35 (1977) 1
Reiss H., J. Appl. Phys. 39 (1968) 5045
Kern R.,A. Masson and Metois J.J., Surf. Sci. 27 (1971) 483
Kotze I.A., J.C. Lombard and Henning C.A.O., Thin Solid Films 23 (1974) 221
Kuczynski G.C., Metals Trans. (1949) 169
Gjostein N.A., in Adsorption et Croissance Cristalline, Ed. C.N.R.S. Paris, (1965) p 97
Basset G.A., in Condensation and Evaporation of Solids3 Gold- finger Ed., 1962, p 599
Honjo G., Yagi K. J. Vac. Sci. Technol. (1969) 576 and Thirty Fourth Annual EMSA Meeting (1976) p 442
Vincent R., Proc. Roy. Soc.Lond. A 321 (1971) 53
Skofronick J.C., Phillips W.B., J. Appl. Phys. 38(1967)4791; 39(1968)3210
Zanghi J.C., Metois J.J. and Kern R., Surf. Sci. 52(1975)556
Zanghi J.C., Gauch M., Metois J.J. and Masson A., Thin Solid Films 33 (1 976)83
Ruckenstein E. and Pulvermacher B., J. Catal. 29(1973)224
Kashchiev D., Surface Sc. 55 (1976)477
Henry C.R., Chapon C. and Mutaftschiev B., Thin Sol. Films 46 (1977)157
Masson A., Metois J.J. and Kern R., in Advances in Epitaxy and Endotaxy, Ed. Schneider, Ruth, VEB Deutscher Verlag fur Grund- stoffindustrie, Leipzig, 1971, p 103.
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© 1982 D. Reidel Publishing Company
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Kern, R. (1982). Coalescence of Nuclei on Substrates. In: Mutaftschiev, B. (eds) Interfacial Aspects of Phase Transformations. NATO Advanced Study Institutes Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7870-6_12
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DOI: https://doi.org/10.1007/978-94-009-7870-6_12
Publisher Name: Springer, Dordrecht
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