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Large Scale Integrated Circuits Technology: State of the Art and Prospects pp 223–253Cite as

Computer Simulation of Complete IC Fabrication Process

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Part of the book series: NATO Advanced Study Institutes Series ((NSSE,volume 55))

Abstract

This article summarizes the current state-of-the-art in complete process modeling. Important aspects of both technology modeling and computer simulation which make it possible to numerically simulate multiple diffused species -- arsenic-boron and phosphorus-boron -- as well as redistribution effects associated with moving boundaries in oxidation and epitaxy will be discussed.

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Author information

Authors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA

    D. A. Antoniadis

Authors
  1. D. A. Antoniadis
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Editor information

Editors and Affiliations

  1. IBM T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    Leo Esaki

  2. CNR-Lamel, 40126, Bologna, Italy

    Giovanni Soncini

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© 1982 Martinus Nijhoff Publishers, The Hague

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Antoniadis, D.A. (1982). Computer Simulation of Complete IC Fabrication Process. In: Esaki, L., Soncini, G. (eds) Large Scale Integrated Circuits Technology: State of the Art and Prospects. NATO Advanced Study Institutes Series, vol 55. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7645-0_9

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  • DOI: https://doi.org/10.1007/978-94-009-7645-0_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-7647-4

  • Online ISBN: 978-94-009-7645-0

  • eBook Packages: Springer Book Archive

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