Silicon Crystals for Large Scale Integrated Circuits

  • B. O. Kolbesen
Conference paper
Part of the NATO Advanced Study Institutes Series book series (NSSE, volume 55)


Silicon is the basic material of the electronic industry. The considerable continuous growth of this industry brings about a steadily increasing demand for electronic-grade poly-crystalline silicon1, which in 1980 has already exceeded 2000 tons/year (Fig. 1). The major driving force of the electronic industry is integrated circuits, which require high quality large diameter (75–125 mm) single crystalline wafers and ingots.


Silicon Crystal Oxygen Defect Floating Zone Denude Zone Wafer Processing 
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  1. 1.
    E. Costogue, R. Ferber, W. Hasbach, R. Pellin and C. Yaws in Silicon Materials Outlook Study for 1980–85 US Department of Energy (DOE)/Jet Propulsion Laboratory (JPL) JPL Publication 79–110, Nov. 1979.Google Scholar
  2. 2.
    W. Keller and A. Mühlbauer, Floating-Zone Silicon, Preparation and Properties of Solid State Materials, ed., W. R. Wilcox, Marcel Dekker Inc., New York, Basel 1981.Google Scholar
  3. 3.
    H. Herrmann, H. Herzer and E. Sirtl, Advances in Solid State Physics XV, p. 279, ed. H. J. Queisser, Pergamon/Vieweg, Braunschweig (1975).Google Scholar
  4. 4.
    B. O. Kolbesen and A. Mühlbauer, Solid State Electronics, in print.Google Scholar
  5. 5a.
    ASTM (American Society for Testing and Materials) Designation F 120, F 121 (Oxygen) and F 123 (Carbon) - 70T, Book of ASTM Standards, Part 8 (1970).Google Scholar
  6. 5b.
    DIN 50 438 Teil 1 (Oxygen) and Teil 2 (Carbon); Deutsches Institut für Normung 1980.Google Scholar
  7. 6.
    T. Abe, K. Kikuchi, S. Shirai and S. Muraoka, Semiconductor Silicon 1981, ed. H. R. Huff, R. J. Kriegler and Y. Takeishi, The Electrochem. Soc, Pennington, N.J. p. 54.Google Scholar
  8. 7.
    J. A. Burton, R. C. Prim and W. P. Slichter, J. Chem. Phys. 21, 1987 (1953).CrossRefGoogle Scholar
  9. 8.
    K. E. Benson, W. Lin and E. P. Martin, Ref. 6, p. 33.Google Scholar
  10. 9.
    J. R. Carruthers, A. F. Witt and R. E. Reusser, Semiconductor Silicon 1977, ed. H. R. Huff and E. Sirtl, The Electrochem. Soc, Princeton, N.J., p. 61.Google Scholar
  11. 10.
    J. Burtscher in Scientific Principles of Semicond. Tech., Proc. European Summer School, ed. H. Weiss, 1974, p. 63.Google Scholar
  12. 11.
    W. G. Pfann, Zone Melting, second edition Wiley, New York (1965).Google Scholar
  13. 12.
    T. Suzuki, N. Isawa, Y. Okubo and K. Hoshi, Ref. 6, p. 90.Google Scholar
  14. 13.
    K. Hoshikawa, H. Hirata, H. Nakanishi and K. Ikuta, Ref. 6, p. 101.Google Scholar
  15. 14.
    A. Murgai, Ref. 6, p. 113.Google Scholar
  16. 15.
    W. Lin and C. W. Pearce, J. Appl. Phys. 51, 5540 (1980)CrossRefGoogle Scholar
  17. 16.
    T. Abe, K. Kikuchi and S. Shirai, Ref. 9, p. 95.Google Scholar
  18. 17.
    S. M. Hu and W. J. Patrick, J. Appl. Phys. 46, 1869, (1975).CrossRefGoogle Scholar
  19. 18.
    K. Sumino, Ref. 6, p. 208.Google Scholar
  20. 19.
    B. Leroy and C. Plougonven, J. Electrochem. Soc, 127, 961 (1980).CrossRefGoogle Scholar
  21. 20.
    A. George and G. Champier, Phys. Stat. Solidi(a) 53, 529 (1979).CrossRefGoogle Scholar
  22. 21.
    Y. Kondo, Ref. 6, p. 220.Google Scholar
  23. 22.
    J. R. Patel, Discuss. Faraday Soc. 38, 201 (1964).CrossRefGoogle Scholar
  24. 23.
    K. G. Moerschel, C. W. Pearce and R. E. Reusser, Ref. 9 p. 170.Google Scholar
  25. 24.
    R. W. Series, K. G. Barraclough and W. Bardsley, Ref. 6 p. 304.Google Scholar
  26. 25.
    A. J. R. de Kock in Handbook on Semiconductors Vol. 3, ed. S. P. Keller, North Holland Publishing Comp. 1980, p. 247.Google Scholar
  27. 26.
    A. J. R. de Kock in Defects in Semiconductors, ed. J. Narayan and T. Y. Tan, North Holland, 1981 p. 309.Google Scholar
  28. 27.
    A. J. R. de Kock and W. M. van de Wijgert, J. Cryst. Growth 49, 718 (1980).CrossRefGoogle Scholar
  29. 28.
    A. J. R. de Kock, W. T. Stacy and W. M. van de Wijgert, Appl. Phys. Lett. 34, 611 (1979).CrossRefGoogle Scholar
  30. 29.
    H. Foil and B. O. Kolbesen, Appl. Phys. 8, 319 (1975).CrossRefGoogle Scholar
  31. 30.
    P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth 30, 117 (1975).CrossRefGoogle Scholar
  32. 31.
    K. Daido, S. Shinoyama and N. Inoue, Rev. Electrical Comm. Lab. 27, No. 1–2 (1979).Google Scholar
  33. 32.
    C. J. Varker and K. V. Ravi, Semiconductor Silicon 1973, Ed. H. R. Huff and R. R. Burgess, The Electrochem. Soc, Princeton, N.J., p. 670.Google Scholar
  34. 33.
    J. R. Patel, Ref. 9, p. 521.Google Scholar
  35. 34.
    J. R. Patel, Ref. 6, p. 189.Google Scholar
  36. 35.
    R. A. Craven, Ref. 6, p. 254.Google Scholar
  37. 36.
    Y. Takano and M. Maki, Ref. 32, p. 469.Google Scholar
  38. 37.
    N. Inoue, K. Wada and J. Osaka, Ref. 6, p. 282.Google Scholar
  39. 38.
    J. Osaka, N. Inoue and K. Wada, Appl. Phys. Lett. 36, 288 (1980).CrossRefGoogle Scholar
  40. 39.
    K. Wada, N. Inoue and K. Köhra, J. Cryst. Growth 49, 749 (1980)CrossRefGoogle Scholar
  41. 40.
    J. R. Patel, K. A. Jackson and H. Reiss, J. Appl. Phys. 48, 5279 (1977).CrossRefGoogle Scholar
  42. 41.
    S. M. Hu, Appl. Phys. Lett. 36, 561 (1980).CrossRefGoogle Scholar
  43. 42.
    S. M. Hu, Defects in Semiconductors, ed. J. Narayan and T. Y. Tan, North Holland 1981, p. 333.Google Scholar
  44. 43.
    W. K. Tice and T. Y. Tan, Appl. Phys. Lett. 28, 564 (1976).CrossRefGoogle Scholar
  45. 44.
    T. Y. Tan and W. K. Tice, Phil. Mag., 34, 615 (1976).CrossRefGoogle Scholar
  46. 45.
    B. O. Kolbesen and H. Strunk, Inst. Phys. Conf. Ser. No. 57, 21, (1981).Google Scholar
  47. 46.
    B. O. Kolbesen and K. R. Mayer, Res. Rept. No. T79–156 Fed. Dept Res and Technol. FRG, 1979.Google Scholar
  48. 47.
    H. H. Steinbeck, Abs. 530 Vol. 80–2. The Electrochem. Soc. Fall Meeting Hollv-wood, Fia. 1980.Google Scholar
  49. 48.
    G. Franz and B. O Kolbesen, Res. Rept. No. T81-NT 947, Fed. Dept Res and Technol. FRG, 1981.Google Scholar
  50. 49.
    W. R. Wilcox and T. J. La Chapelle, J. Appl. Phys. 35, 240 (1964).CrossRefGoogle Scholar
  51. 50.
    D. Huber, P. Stallhofer and M. Blatte, Ref. 6, p. 756.Google Scholar
  52. 51.
    K. Kugimiya, S. Akiyama and S. Nakamura, Ref. 6, p. 249.Google Scholar

Copyright information

© Martinus Nijhoff Publishers, The Hague 1982

Authors and Affiliations

  • B. O. Kolbesen
    • 1
  1. 1.Siemens AGResearch LaboratoriesMunich 83Fed. Rep. Germany

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