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Preparation, Study and Characterization of Hydrogenated Amorphous Silicon for Photovoltaic Cells

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Part of the book series: Solar Energy R&D in the European Community ((SRDC,volume 3))

Summary

A novel technique for the deposition of a-Si:H by a double ion-gun sputtering apparatus is described. Properties of some preliminary samples prepared by this method are discussed. A procedure for gap-state spectroscopy by photoconductivity measurements has been developed and tested on glow-discharge samples. It is shown that there is a close correspondence between gap-state density and recombination kinetics. Some preliminary work on Schottky-barrier cells is reported.

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References

  1. C. Weissmantel, Thin Solid Films 32, 11 (1976);

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  2. C. Weissmantel, Le Vide 183, 107 (1976).

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  3. P.J. Wilburn and H.R. Kaufman, AIAA Paper n. 78, 667 (1978).

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  4. F. Evangelisti, P. Fiorini, G. Fortunato, A. Frova, C. Giovannella and R. Peruzzi, J. Non-Cryst. Solids (submitted).

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  5. F. Evangelisti, P. Fiorini, G. Fortunito and C. Giovannella (to be published).

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© 1983 ECSC, EEC, EAEC, Brussels and Luxembourg

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Coluzza, C. et al. (1983). Preparation, Study and Characterization of Hydrogenated Amorphous Silicon for Photovoltaic Cells. In: Van Overstraeten, R., Palz, W. (eds) Photovoltaic Power Generation. Solar Energy R&D in the European Community, vol 3. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-7136-3_25

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  • DOI: https://doi.org/10.1007/978-94-009-7136-3_25

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-7138-7

  • Online ISBN: 978-94-009-7136-3

  • eBook Packages: Springer Book Archive

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