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Oxidation Kinetics of Hot-Pressed Silicon Nitride

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Progress in Nitrogen Ceramics

Part of the book series: NATO ASI Series ((NSSE,volume 65))

Abstract

A simplified model for evaluation of the oxidation behaviour of hot-pressed silicon nitride (HPSN) has been derived which accounts for the amount and type of grain boundary phase and for the composition at the Si3N4/oxide reaction interface. The model proved suitable for explaining the oxidation behaviour of a wide range of materials including those with MgO, CeO2, (CeO2 + SiO2), (Y2O3 + SiO2), (MgO + Y2O3) additives. Some deductions are also possible on how to improve the oxidation resistance of HPSN.

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References

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Authors and Affiliations

  1. Research Institute for Ceramics Technology, C.N.R., Faenza, Italy

    G. N. Babini & P. Vincenzini

Authors
  1. G. N. Babini
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  2. P. Vincenzini
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Editor information

Editors and Affiliations

  1. Houldsworth School of Applied Science, The University of Leeds, Leeds, Yorksh., UK

    F. L. Riley

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© 1983 Martinus Nijhoff Publishers, Boston/The Hague/Dordrecht/Lancaster

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Babini, G.N., Vincenzini, P. (1983). Oxidation Kinetics of Hot-Pressed Silicon Nitride. In: Riley, F.L. (eds) Progress in Nitrogen Ceramics. NATO ASI Series, vol 65. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6851-6_37

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  • DOI: https://doi.org/10.1007/978-94-009-6851-6_37

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-6853-0

  • Online ISBN: 978-94-009-6851-6

  • eBook Packages: Springer Book Archive

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