Abstract
Some important and topical aspects of non-crystalline semiconductors are considered with emphasis on the two most extensively studied groups of materials, namely the tetrahedrally coordinated elements, in particular a-Si:H, and the chalcogenides. Intrinsic disorder, characteristic of continuous random network models of their structures, is distinguished from specific point defects. The former leads to localized electronic states in band tails and a relaxation of k-conservation selection rules for interband optical transitions. The latter produce states in the gap and these are shown to be fundamentally different in the two classes of material. Various experimental techniques and results which provide information on the nature and distribution of the electronic states are described.
Keywords
- Deep Level Transient Spectroscopy
- Dangling Bond
- Amorphous Semiconductor
- Band Tail
- Optical Absorption Edge
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© 1984 D. Reidel Publishing Company, Dordrecht, Holland
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Davis, E.A. (1984). Electronic Properties of Non-Crystalline Semiconductors. In: Acrivos, J.V., Mott, N.F., Yoffe, A.D. (eds) Physics and Chemistry of Electrons and Ions in Condensed Matter. NATO ASI Series, vol 130. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6440-2_17
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DOI: https://doi.org/10.1007/978-94-009-6440-2_17
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