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Tailored Semiconductors: Compositional and Doping Superlattices

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Modulated Structure Materials

Part of the book series: Nato ASI Series ((NSSE,volume 83))

Abstract

Progress in crystal growth techniques has made feasible the realization of periodic semiconductor structures composed of ultrathin layers. Essentially two types of such “man-made” superlattices may be distinguished: i) Compositional superlattices, consisting of a periodic sequence of two different semiconductor materials with lattice matching (GaAs-Alx Ga1−x As, e.g.). A superlattice potential is induced in the conduction and the valence band by the periodic variation of the energy gap in the direction of crystal growth. ii) Doping superlattices, a sequence of n- and p-doped layers, possibly with undoped layers in between (“n-i-p-i-superstructures”), grown in an otherwise homogeneous semiconductor bulk. The periodic potential in n-i-p-i crystals is due to the electrostatic potential of fixed ionized impurities, which may be partly compensated by mobile electrons and holes confined to the n- and p-layers, respectively.

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Author information

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 7000, Stuttgart 80, Germany

    G. H. Döhler

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  1. G. H. Döhler
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Editors and Affiliations

  1. Department of Mechanics and Materials Science, Rutgers University, Piscataway, NJ, 08854, USA

    T. Tsakalakos

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© 1984 Martinus Nijhoff Publishers, Dordrecht

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Döhler, G.H. (1984). Tailored Semiconductors: Compositional and Doping Superlattices. In: Tsakalakos, T. (eds) Modulated Structure Materials. Nato ASI Series, vol 83. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6195-1_29

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  • DOI: https://doi.org/10.1007/978-94-009-6195-1_29

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-6197-5

  • Online ISBN: 978-94-009-6195-1

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