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Unijunction transistors; silicon controlled rectifiers: characteristics and applications

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Abstract

The unijunction transistor (Fig. 5.1) consists of a rod of n-type silicon to the ends of which ohmic (non-rectifying) contacts B1 and B2 are made. The resistance of the silicon rod, called the interbase resistance, is usually between 5 kΩ and 10 kΩ. On one side of this silicon rod is formed a p-n junction by alloying a wire of aluminium (trivalent so producing p-type material); this junction is usually located near to the base B2. An emitter electrode E is brought out from the p-type material; this emitter divides the interbase resistance in the ratio RB2 to RB1.

Keywords

Phase Angle Relaxation Oscillator Voltage Waveform Experimental Electronic Gate Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© K.J. Close and J. Yarwood 1979

Authors and Affiliations

  1. 1.School of Engineering and Science, The Polytechnic of Central LondonUK

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