Unijunction transistors; silicon controlled rectifiers: characteristics and applications



The unijunction transistor (Fig. 5.1) consists of a rod of n-type silicon to the ends of which ohmic (non-rectifying) contacts B1 and B2 are made. The resistance of the silicon rod, called the interbase resistance, is usually between 5 kΩ and 10 kΩ. On one side of this silicon rod is formed a p-n junction by alloying a wire of aluminium (trivalent so producing p-type material); this junction is usually located near to the base B2. An emitter electrode E is brought out from the p-type material; this emitter divides the interbase resistance in the ratio RB2 to RB1.


Phase Angle Relaxation Oscillator Voltage Waveform Experimental Electronic Gate Current 
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Copyright information

© K.J. Close and J. Yarwood 1979

Authors and Affiliations

  1. 1.School of Engineering and Science, The Polytechnic of Central LondonUK

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