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Radiation Degradation of Poly(Olefin Sulphone)s—Fundamental Research to Practical Applications

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Summary

The degradation of poly(olefin sulphone)s by high energy radiation, particularly by γ-rays and electron beams, provides a fascinating example of the application of fundamental science to high technology industry. Scientific interest in the radiation degradation of these polymers was first aroused by the discovery that they underwent highly specific bond scission in the backbone chain as the primary result of absorption of high energy radiation and in fact they were the first polymers in which such an effect had been demonstrated. This conclusion was initially based mainly on evidence from electron spin resonance spectroscopy and was subsequently verified by studies of molecular weight changes. These studies showed that the poly(olefin sulphone)s not only degraded by main chain scission but were also among the most radiation-sensitive polymers known.

The extremely high sensitivity of poly (olefin sulphone)s to radiation- induced main-chain scission has found application in the field of micro-electronics. Electron beam writing on poly(olefin sulphone) films is used to produce lithographic masks for the manufacture of integrated circuits on silicon wafers. Poly(1-butene sulphone) (PBS) is currently used in the production of a substantial proportion of the masks for the industry.

It is the purpose of this paper to review the fundamental aspects of the radiation degraration of poly(olefin sulphone)s along with the practical applications to high technology stemming from the fundamental science.

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Bowden, M.J., O’Donnell, J.H. (1985). Radiation Degradation of Poly(Olefin Sulphone)s—Fundamental Research to Practical Applications. In: Grassie, N. (eds) Developments in Polymer Degradation—6. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4940-9_2

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  • DOI: https://doi.org/10.1007/978-94-009-4940-9_2

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