Abstract
Kinetic methods for identification of the dominant recombination mechanism of photogenerated carriers can yield important information concerning the current-voltage behavior of semiconductor/ liquid junctions. We describe here the application of these techniques to systems based on n-Si and n-GaAs photoelectrodes. The use of nonaqueous solvents and outer sphere redox couples allows separation of the overpotential losses associated with fuel formation from losses inherent to the solid/solvent junction itself. Control over surface chemical interactions in both liquid and Schottky junctions can be attained by photoelectrochemical treatments to reduce interface recombination processes. Calculations of the theoretical upper limit on the photovoltage for a given semiconductor/liquid interface can be useful in assessing the prospects for improved current-voltage performance in response to surface modification procedures.
Keywords
- Photocurrent Density
- Liquid Junction
- Nonaqueous Solvent
- Schottky Junction
- Minority Carrier Diffusion Length
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Lewis, N.S., Rosenbluth, M.L., Casagrande, L.G., Tufts, B.J. (1986). Mechanistic Aspects of Semiconductor Photoelectrochemistry: The Behavior of Si and GaAs in Nonaqueous Solvents. In: Pelizzetti, E., Serpone, N. (eds) Homogeneous and Heterogeneous Photocatalysis. NATO ASI Series, vol 174. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4642-2_21
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DOI: https://doi.org/10.1007/978-94-009-4642-2_21
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