Abstract
A comparative study on nanoand microsecond laser processing in the Al-Ge system is presented. The samples are multilayer films either as-grown or preprocessed with an excimer laser. When the films are irradiated in the low-power microsecond regime, the results suggest a layer mixing process. When increasing the laser power, there is a distinct difference in the damage or ablation process for the Ge-rich preprocessed film due probably to the existence of Ge crystals segregated at the surface.
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© 1986 Martinus Nijhoff Publishers, Dordrecht
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Afonso, C.N., Ortiz, C. (1986). Laser Processing Of Al-Ge Multilayer Thin Films. In: Draper, C.W., Mazzoldi, P. (eds) Laser Surface Treatment of Metals. NATO ASI Series, vol 115. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4468-8_31
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DOI: https://doi.org/10.1007/978-94-009-4468-8_31
Publisher Name: Springer, Dordrecht
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