Simulation of Near Atomic Scale Sputter Induced Morphology

Abstract

On a length scale of ion penetration range R_p(E), the prediction of a surfaces topographical development due to atom and ion bombardment as a result of erosion by sputtering and diffusional processes, that can be radiation enhanced, depends on parameters that are instantaneous contour dependent. On this length scale an analytic treatment results in an intractable mathematical description of the temporal topographic growth requiring computer simulation for detailed prediction. A recursive computer simulation, that advances points on a contour a short distance along the surf ace normal direction to form a new and slightly modified contour, is compared to TEM micrographs that show this contour development on the length scale where these second order effects first become important. Simulation results qualitatively confirm the experimental findings that topography development is influenced on this length scale by the spatial distribution of sputtering as well as curvature dependent migrational processes.