Abstract
Bulk-Barrier-Diodes (BBD) have recently gained growing interest for the application as photodiodes with internal gain ∣3∣, mixers ∣5∣ and as high sensitivity temperature sensors ∣4∣. Previous work ∣3∣ considers only the interband transition of optically excited carriers, since the number of lattice defects is minimized after the diode annealing ∣6∣.
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© 1986 Martinus Nijhoff Publishers, Dordrecht
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Georgoulas, N. (1986). Influence of Lattice Defects Produced by ION Implantation on Electrical and Optical Properties of Bulk-Barrier-Diodes. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_26
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DOI: https://doi.org/10.1007/978-94-009-4422-0_26
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