Skip to main content

Influence of Lattice Defects Produced by ION Implantation on Electrical and Optical Properties of Bulk-Barrier-Diodes

  • Chapter
Erosion and Growth of Solids Stimulated by Atom and Ion Beams

Part of the book series: NATO ASI Series ((NSSE,volume 112))

  • 122 Accesses

Abstract

Bulk-Barrier-Diodes (BBD) have recently gained growing interest for the application as photodiodes with internal gain ∣3∣, mixers ∣5∣ and as high sensitivity temperature sensors ∣4∣. Previous work ∣3∣ considers only the interband transition of optically excited carriers, since the number of lattice defects is minimized after the diode annealing ∣6∣.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Shannon J.M.: A Majority-Carrier Camel Diode, Appl. Phys. Lett. 35 (1), Jul. 1979, pp 63–65.

    Article  CAS  Google Scholar 

  2. Mader H.: Electrical Properties of Bulk-Barrier-Diodes, IEEE Trans. Ele¬ctron Devices, Vo. ED-29, No. 11, 1982, pp 1766–1771.

    Article  Google Scholar 

  3. Georgoulas N.: The Camel Diode as Photodetector with High Internal Gain, TREE Electron Device Letters, EDL-3, No. 3, pp 61–63, 1982.

    Article  Google Scholar 

  4. Schaff er H.: Ein empfindlicher Silizium-Tenperature Sensor, AEÜ, Band 38, Heft 1, pp 69–72, 1984.

    Google Scholar 

  5. Malik R.T., Dixon S.: A Subharmonic Mixer Using a Planar Doped Barrier Diode with Symmetric Conductance, Electr. Device Letters, Vol. EDL-3, No.7, pp 205–207, 1982

    Article  Google Scholar 

  6. Georgoulas N .: Infrarotempfindlichkeit von Bulk-Barrier-Dioden. Dissertation, Technische Universität München, 1981

    Google Scholar 

  7. Matsui, P.Baruch: Lattice Defects in Semiconductors, Ryukiti R. Hasiguti, University of Tokyo Press (1968), p 282

    Google Scholar 

  8. H.Ryssel,I.Ruge: Ionenimplantation, B.G.Teubner, Stuttgart (1978)

    Google Scholar 

  9. D.K.Brice : Ion Implantation Range and Energy Deposition Distributions, Vol. 1 incident Ion Energies, New-York (1975)

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1986 Martinus Nijhoff Publishers, Dordrecht

About this chapter

Cite this chapter

Georgoulas, N. (1986). Influence of Lattice Defects Produced by ION Implantation on Electrical and Optical Properties of Bulk-Barrier-Diodes. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_26

Download citation

  • DOI: https://doi.org/10.1007/978-94-009-4422-0_26

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8468-0

  • Online ISBN: 978-94-009-4422-0

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics