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Erosion and Growth of Solids Stimulated by Atom and Ion Beams pp 297–315Cite as

Reactive Ion Etching of GaAs and Related III-V Compounds

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Part of the book series: NATO ASI Series ((NSSE,volume 112))

Abstract

Details pertaining to high and low pressure reactive ion etching (RIE) of GaAs, InP and InGaAs are discussed. Attention is given to elaborating the role of ion bombardment and chemical reaction in dry etching of these compound semiconductors. Both high pressure (≥0.1 Torr) and low pressure (1–100 mTorr) experiments are outlined using the dark space DC bias voltage to characterize the etch. Surface analysis of etched GaAs and InP using AES, photoluminescence and EDX is used to establish the role of impurities related to changes in surface morphology and chemical changes due to RIE.

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Author information

Authors and Affiliations

  1. Bell-Northern Research, Ottawa, Ontario, KlY 4H7, Canada

    Steven Dzioba

Authors
  1. Steven Dzioba
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Editor information

Editors and Affiliations

  1. Physics Department, University of Crete, Heraklion, Crete, Greece

    G. Kiriakidis

  2. Department of Electronic and Electrical Engineering, University of Salford, Salford, UK

    G. Carter

  3. Physics Department, Queen’s University, Kingston, Canada

    J. L. Whitton

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© 1986 Martinus Nijhoff Publisher

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Dzioba, S. (1986). Reactive Ion Etching of GaAs and Related III-V Compounds. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_17

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  • DOI: https://doi.org/10.1007/978-94-009-4422-0_17

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8468-0

  • Online ISBN: 978-94-009-4422-0

  • eBook Packages: Springer Book Archive

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