Abstract
Elemental Cu and Ti films have been deposited onto ceramic substrates with a plasma-aided physical vapor deposition (ion-plating) process. This paper discusses how the structure and chemistry of the metallic film and the metal/ceramic interface are modified by low energy ion and neutral atom bombardment. Emphasis is placed on determining how low energy ion/neutral atom bombardment affects the strength of the metal/ceramic interface. Analyses of the film, interface and substrate regions have employed scanning Auger microprobe, secondary ion mass spectroscopy, SEM/STEM-energy dispersive x-ray and TEM/STEM imaging and microdiffraction techniques.
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© 1986 Martinus Nijhoff Publishers, Dordrecht
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Rigsbee, J.M., Scott, P.A., Knipe, R.K., Hock, V.F. (1986). On The Modification of Metal/Ceramic Interfaces by Low Energy Ion/Atom Bombardment During Film Growth. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_15
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DOI: https://doi.org/10.1007/978-94-009-4422-0_15
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