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Physical Sputtering of Elemental Metals and Semiconductors

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Erosion and Growth of Solids Stimulated by Atom and Ion Beams

Part of the book series: NATO ASI Series ((NSSE,volume 112))

Abstract

This overview is not intended as yet another contribution to existing reviews on the physics of sputtering and its history. In this respect, the interested reader is referred to the excellent recent monographs and conference proceedings given in Ref.1 to 5. The intention of this article is to give an introduction to physical sputtering, guided by the interplay between collisional and “thermal” sputtering which has obscured the understanding of the phenomenon since its discovery. It will become apparent that angular distributions of sputtered particles have always played a decisive role in identifying the relevant mechanisms, energy distributions have allowed quantifying them, and mass distributions now urge further efforts towards understanding collective processes.

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Authors and Affiliations

  1. Kernforschungsanlage Jülich GmbH, IGV, D-5170, Jülich, Germany

    Wolfgang O. Hofer

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  1. Wolfgang O. Hofer
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Editors and Affiliations

  1. Physics Department, University of Crete, Heraklion, Crete, Greece

    G. Kiriakidis

  2. Department of Electronic and Electrical Engineering, University of Salford, Salford, UK

    G. Carter

  3. Physics Department, Queen’s University, Kingston, Canada

    J. L. Whitton

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Hofer, W.O. (1986). Physical Sputtering of Elemental Metals and Semiconductors. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_1

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